Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-02-04T18:06:37.656Z Has data issue: false hasContentIssue false
  • English
  • Français

Reactive-Ion-Etching of 100nm Linewidth Tungsten Features Using SF6:H2 and a Cr-Liftoff Mask

Published online by Cambridge University Press:  22 February 2011

Loretita M. Shirey ,
Kelly W. Foster ,
William Chu ,
John Kosakowski ,
Kee Woo Rhee ,
Charles Eddy Jr. ,
Doewon Park ,
I. Peter Isaacson ,
Daniel Mccarthy  and
Christie R. K. Marrian
...Show all authors
Loretita M. Shirey
Affiliation:
Naval Research Laboratory, Nanoelectronics Processing Facility, Code 6804, 4555 Overlook Ave. SW, Washington, DC 20375
Kelly W. Foster
Affiliation:
Applied Research Corporation, 8201 Corporate Drive, Suite 1120, Landover, MD 20785
William Chu
Affiliation:
Naval Research Laboratory, Nanoelectronics Processing Facility, Code 6804, 4555 Overlook Ave. SW, Washington, DC 20375
John Kosakowski
Affiliation:
SFA, Inc., 1401 McCormick Drive, Landover, MD 20785
Kee Woo Rhee
Affiliation:
SFA, Inc., 1401 McCormick Drive, Landover, MD 20785
Charles Eddy Jr.
Affiliation:
Naval Research Laboratory, Code 6675, 4555 Overlook Ave. SW, Washington, DC 20375
Doewon Park
Affiliation:
Naval Research Laboratory, Nanoelectronics Processing Facility, Code 6804, 4555 Overlook Ave. SW, Washington, DC 20375
I. Peter Isaacson
Affiliation:
Naval Research Laboratory, Nanoelectronics Processing Facility, Code 6804, 4555 Overlook Ave. SW, Washington, DC 20375
Daniel Mccarthy
Affiliation:
Naval Research Laboratory, Nanoelectronics Processing Facility, Code 6804, 4555 Overlook Ave. SW, Washington, DC 20375
Christie R. K. Marrian
Affiliation:
Naval Research Laboratory, Nanoelectronics Processing Facility, Code 6804, 4555 Overlook Ave. SW, Washington, DC 20375
Martin C. Peckerar
Affiliation:
Naval Research Laboratory, Code 6860, 4555 Overlook Ave. SW, Washington, DC 20375
Elizabeth A. Dobisz
Affiliation:
Naval Research Laboratory, Code 6860, 4555 Overlook Ave. SW, Washington, DC 20375
Get access

Abstract

Reactive ion etching of features down to 100 nm in linewidth in tungsten has been studied using an SF6 based chemistry. The studies were carried out in a PlasmaTherm 500 etcher operated at low pressure (2 mTorr) and power (100 mWatts/cm2). Key processing parameters have been identified to achieve the resolution and aspect ratio required for high contrast x-ray masks. The critical parameters include sample temperature, gas dilution and end point detection. However, even with all of these parameters optimized, additional sidewall passivation is required to obtain the necessary 6.5:1 aspect ratio. A novel method of achieving such passivation based on an intermittent etching process is described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 487
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ku, Y.C., Ng, L.-P., Carpenter, R., Lu, K., Smith, H.I., Haas, L.E. and Plotnik, I., J. Vac. Sci. Technol. B, 9(6), 3297 (1991).Google Scholar
2. Rhee, K.W., Ting, A.C., Shirey, L.M., Foster, K.W., Andrews, J.M., Peckerar, M.C. and Ku, Y.C., J. Vac Sci. Technol. B, 9(6), 3292 (1991).CrossRefGoogle Scholar
3. Peters, L., Semiconductor International, May, 66 (1992).Google Scholar
4. Chu, W., Foster, K.W., Shirey, L.M., Rhee, K.W., Kosakowski, J., Isaacson, P., McCarthy, D., Eddy, C.R. Jr., Dobisz, E.A., Marrian, C.R.K. and Peckerar, M.C., (submitted to Appl. Phys. Lett.)Google Scholar
5. Jurgensen, C.W., Kola, R.R., Novembre, A.E., Tai, W.W., Frackoviak, J., Trimble, L.E. and Celler, G.K., J. Vac. Sci. Technol. B, 9(6), 3280 (1991).Google Scholar