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Reactions of Bare Silicon Cluster Ions: Prototypical Deposition and Etching Versus Cluster Size

Published online by Cambridge University Press:  28 February 2011

M. L. Mandich ,
W. D. Reents Jr  and
V. E. Bondybey
M. L. Mandich
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
W. D. Reents Jr
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
V. E. Bondybey
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

Prototypical silicon deposition and etching reactions have been observed in gas phase reactions of size selected bare silicon cluster ions at room temperature. Laser evaporation of bulk silicon just outside the ion cell of a Fourier transform mass spectrometer produces abundant positive and negative silicon cluster ions. These cluster ions are trapped inside the cell for subsequent study of their bimolecular reactivity with various neutral reagents. Deposition type reactions occur with silanes, e.g. CH3SiH3, and increase the number of silicon atoms in the cluster. Etching reactions occur in reactions with certain halogen or oxygen containing reagents. For example, NO2 and XeF2 react to destroy the silicon clusters by sequential loss of a silicon atom. Overall the reactivity of small silicon cluster ions correlates with chemistry which occurs at two distinct types of dangling bonds in the clusters: either a lone pair of electrons or a single unpaired electron.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 467
Copyright
Copyright © Materials Research Society 1987

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References

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