Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-02T23:17:32.941Z Has data issue: false hasContentIssue false
  • English
  • Français

Reactions of Atomic and Molecular Fluorine on Silicon Surfaces

Published online by Cambridge University Press:  28 February 2011

C. D. Stinespring ,
A. Freedman ,
J. C. Wormhoudt  and
C. E. Kolb
C. D. Stinespring
Affiliation:
Center for Chemical and Environmental Physics, Aerodyne Research, Inc., 45 Manning Rd., Billerica, Ma. 01821
A. Freedman
Affiliation:
Center for Chemical and Environmental Physics, Aerodyne Research, Inc., 45 Manning Rd., Billerica, Ma. 01821
J. C. Wormhoudt
Affiliation:
Center for Chemical and Environmental Physics, Aerodyne Research, Inc., 45 Manning Rd., Billerica, Ma. 01821
C. E. Kolb
Affiliation:
Center for Chemical and Environmental Physics, Aerodyne Research, Inc., 45 Manning Rd., Billerica, Ma. 01821
Get access

Abstract

The reactions of atomic and molecular fluorine on silicon surfaces have been studied using x-ray photoelectron spectroscopy (XPS) and an ultrahigh vacuum (UHV) compatible microwave discharge effusive beam source of reactive species. The results indicate that molecular fluorine is dissociatively chemisorbed to form SiF2-like species on the surface. This reaction saturates at approximately monolayer surface coverage. Atomic fluorine also reacts initially to form SiF2-like surface species. Once the available surface sites are occupied, however, the fluorine atoms penetrate and react with silicon in the underlying layers. As the fluorine uptake increases, many of the subsurface silicon atoms become fully fluorinated. That is, the reaction product becomes SiF4-like. In contrast, preliminary studies indicate little difference in the behavior of atomic and molecular chlorine. These findings are compared with previous results for XeF2 adsorption, and their implications for plasma etching mechanism definition are discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 447
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Flamm, D.L. and Donnelly, V.M., Plas. Chem. Plas. Proc. 1, 317 (1981).Google Scholar
2. Coburn, J.W., Plas. Chem. Plas. Proc. 2, 1 (1982).CrossRefGoogle Scholar
3. Mogab, C.J., Adams, A.C., and Flamm, D.L., J. Appl. Phys. 49 3796 (1978).Google Scholar
4. Mogab, C.J. and Levinstein, H.J., J. Vac. Sci. Technol. 17, 721 (1980).Google Scholar
5. Chuang, T.J., J. Appl. Phys. 51, 2614 (1980).Google Scholar
6. McFeely, F.R., Morar, J.F., Shinn, N.D., Landgren, G., and Himpsel, F.J., Phys. Rev. B30, 764 (1984).Google Scholar
7. Roop, B., Joyce, S., Schultz, J.C., Shinn, N.D., and Steinfeld, J.I., Appl. Phys. Lett. 46, 1187 (1985).Google Scholar
8. McFeely, F.R., J. Vac. Sci. Technol. A3, 879 (1985).Google Scholar
9. Schnell, R.D., Rieger, D., Bogen, A., Himpsel, F.J., Wendelt, K., and Steinmann, W., Surface Sci. 162, 25 (1985).Google Scholar
10. Coburn, J.W. and Winters, H.F., J. Appl. Phys. 50, 3189 (1979).Google Scholar
11. McNevin, S.C. and Becker, G.E., J. Vac. Sci. Technol. B3, 485 (1985).Google Scholar
12. Kolfschoten, A.W., Haring, R.A., Haring, A., and DeVries, A.E., J. Appl. Phys. 55, 3813 (1984).Google Scholar
13. Seel, M. and Bagus, P.S., Phys. Rev. B28, 2023 (1981).Google Scholar
14. Stinespring, C.D. and Freedman, A., Appl. Phys. Lett. 48, xxx (1986).Google Scholar
15. Stinespring, C.D., Freedman, A., and Kolb, C.E., J. Vac. Sci. Technol. A4, xxx (1986).Google Scholar
16. Flamm, D.L., Donnelly, V.M., and Mucha, J.A., J. Appl. Phys. 52, 3633 (1981).Google Scholar