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Rapid Thermal Processing of Shallow Junctions Using Epitaxial CoSi2 as a Doping Source

Published online by Cambridge University Press:  22 February 2011

Erin C. Jones ,
Shinichi Ogawa ,
Paul Ameika ,
M. Lawrence A. Dass ,
David B. Fraser ,
Paul Chu  and
Nathan W. Cheung
Erin C. Jones
Affiliation:
Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
Shinichi Ogawa
Affiliation:
Semiconductor Research Center, Matsushita Electric Co., Moriguchi, OsakBa 570, Japan
Paul Ameika
Affiliation:
Wilmington Fabs Engineering, Group, Analog Devicnes, Wilmington, MA 01887
M. Lawrence A. Dass
Affiliation:
Materials Technology, Intel Corporation, Santa, Clara, CA 95052
David B. Fraser
Affiliation:
Components Research, Intel Corporation, Santa Clara, CA 95052
Paul Chu
Affiliation:
Hong Kong City Polytechnic, Hong Kong
Nathan W. Cheung
Affiliation:
Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
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Abstract

The electrical properties of shallow P+/N junctions formed by boron outdiffusion from polycrystalline and epitaxial CoSi2 contacts are discussed. The CoSi2 contacts are grown on (100) Si from a sputtered metal layer by rapid thermal annealing (RTA) at 900°C in forming gas. The epitaxial CoSi2 (epi-CoSi2) is made from layers of 15 nm Co / 2 nm Ti, and the polycrystalline material (poly-CoSi2) is made from a 15 nm Co layer with no Ti. Dopant is introduced by ion implantation into the silicide and the P+/N junctions are formed by a second RTA step. Junctions are found to have total leakage current densities as low as 4 nA/cm2 for poly-CoSi2 and 12 nA/cm2 for epi-CoSi2 at -5V and metallurgical junction depths of 60 nm beyond silicide/Si interface after 700-800°C annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 339
Copyright
Copyright © Materials Research Society 1994

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References

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