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Rapid Thermal Processing of Gate Dielectric Films and their Characterization

Published online by Cambridge University Press:  28 February 2011

D. L. Flowers ,
J. Nulman  and
J. P. Krusius
D. L. Flowers
Affiliation:
Power and Analog Laboratory, SRDL, Motorola, Inc., 5005 E. McDowell Rd., Phoenix, AZ 85008
J. Nulman
Affiliation:
A. G. Associates, 1325 Borregas Ave., Sunnyvale, CA 94089
J. P. Krusius
Affiliation:
School of Electrical Engineering, Phillips Hall, Ithaca, NY 14853-5401
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Abstract

Rapid thermal processing has been used to grow high quality, low defect density, low mobile charge, dielectric films of oxide and nitrided oxide. Suitable annealing can lower the fixed charge and interfacial trap density present in these filmsto acceptably low levels. Both RTA and RTN were shown to improve the dielectric properties of the grown oxides. These filmsshould be strong candidates for use in high density, shallow junction, integrated circuits where a minimal time/temperature constraint is imposed on further processing after diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 127
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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