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Rapid Thermal Processing of Buried Sil−xGex Strained Layers; Photoluminescence Decay and Misfit Dislocation Generation.

Published online by Cambridge University Press:  28 February 2011

D.C. Houghton  and
N.L. Rowell
D.C. Houghton
Affiliation:
Division of Physics, National Research Council of Canada, Ottawa, Ontario, KIA OR6, Canada
N.L. Rowell
Affiliation:
Division of Physics, National Research Council of Canada, Ottawa, Ontario, KIA OR6, Canada
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Abstract

The thermal constraints for device processing imposed by strain relaxation have been determined for a wide range of Si-Ge strained heterostructures. Misfit dislocation densities and glide velocities in uncapped Sil-xGex alloy layers, Sil-xGex single and multiple quantum wells have been measured using defect etching and TEM for a range of anneal temperatures (450°C-1000°C) and anneal times (5s-2000s). The decay of an intense photoluminescence peak (∼ 10% internal quantum efficiency ) from buried Si1-xGex strained layers has been correlated with the generation of misfit dislocations in adjacent Sil-xGex /Si interfaces. The misfit dislocation nucleation rate and glide velocity for all geometries and alloy compositions (0<x<0.25) were found to be thermally activated processes with activation energies of (2.5±0.2)eV and (2.3-0.65x)eV, respectively. The time-temperature regime available for thermal processing is mapped out as a function of dislocation density using a new kinetic model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 509
Copyright
Copyright © Materials Research Society 1990

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References

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