Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-07T23:24:01.419Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Annealing of Low-Energy P and B Implants in Silicon, Optimized by High Resolution X-Ray Diffraction

Published online by Cambridge University Press:  22 February 2011

Jos G.E. Klappe ,
István Bársony ,
Pierre H. Woerlee ,
Tom W. Ryan  and
P. Alkemade
Jos G.E. Klappe
Affiliation:
University of Twente, MESA Research Institute, P.O. Box 217, 7500 AE Enschede, The Netherlands
István Bársony
Affiliation:
Research Institute for Materials Science KFKI -A TKI, P.O. Box 49, 1525 Budapest, Hungary
Pierre H. Woerlee
Affiliation:
University of Twente, MESA Research Institute, P.O. Box 217, 7500 AE Enschede, The Netherlands
Tom W. Ryan
Affiliation:
Philips Analytical, Lelyweg 1, 7602 EA Almelo, The Netherlands
P. Alkemade
Affiliation:
DIMES/S, Technical University of Delft, Lorentzweg 1, P.O. Box 5046, Deft, The Netherlands
Get access

Abstract

In this paper, low-energy (45 keV) implantations of phosphorous and boron into silicon were studied. A comparison of doping profiles, secondary defect formation, electrical activation and diode leakage was made between Rapid Thermal Annealing (RTA) and conventional furnace annealing. The samples were analysed by High-Resolution X-Ray Diffraction (HR-XRD), X-TEM, SIMS, spreading resistance (SRP) and sheet resistance measurements.

The non-destructive HR-XRD technique combined with the novel simulation software was a very useful tool for the defect characterisation and for the choice of the optimum annealing temperature. Furthermore estimations of electrically active dopant atoms were made with HR-XRD by measurement of the strain. With RTA a substitutional dopant concentration of a factor 2 to 4 higher than with furnace annealing can be obtained, for P and B respectively. Electrical measurements show that not all of the substitutional dopants are electrically active, however. Thus estimates of the electrically active dopant atoms with HR-XRD require further study. Furthermore it appeared that RTA was superior to furnace anneal for lowering sheet resistances, defect removal and dopant profile broadening. However, furnace anneal gave the best results for diode leakage currents. This indicates that RTA processing needs to be further refined or that combined RTA/furnace processes need to be developed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 363
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Klappe, J.G.E., Bársony, I., Ryan, T.W., Mat. Res. Soc. Symp. Proc., 235, 185 (1992)CrossRefGoogle Scholar
[2] Klappe, J.G.E., Bársony, I., Liefting, J.R., Ryan, T.W., Thin Solid Films, 235, 189 (1993)CrossRefGoogle Scholar
[3] Klappe, J.G.E., Fewster, P.F., J. Appl. Cryst., 27, 103 (1994)CrossRefGoogle Scholar
[4] Non-published TXRF measurements, Philips Analytical, Almelo (1993)Google Scholar
[5] Jones, K.S., Rozgonyi, G.A., in ‘Rapid Thermal Processing, Science and Technology’, ed. Fair, R.B., p. 123, (1993)CrossRefGoogle Scholar
[6] Celotti, G., Nobili, D., Ostoja, P., J. Mat. Sci., 9, 821 (1974)CrossRefGoogle Scholar
[7] Hofker, W.K., Philips Res. Repts. Suppl., no. 8 (1975)Google Scholar
[8] Ho, C.P., Plummer, P.D., Hensen, S.E., Dutton, R.W., IEEE Trans. Electron Devices, ED–30, 1438 (1983)CrossRefGoogle Scholar
[9] Armigliato, A., Nobili, D., Ostoja, P., Servidori, M., Solmi, S. in ‘Semiconductor Silicon 1977’, ed. Huff, H. and Sirtl, E. (The Electrochemical Society, Princeton, NJ, 1977), 77–2, p. 638 Google Scholar
[10] Sze, S.M., ‘Semiconductor devices, Physics and technology’, Wiley & Sons (1985)Google Scholar
[11] Sze, S.M., ‘VLSI technology’, McGraw-Hill (1983)Google Scholar
[12] Nobili, D., Armigliato, A., Finetti, M., Solmi, S., J. Appl. Phys., 53, 1484 (1982)CrossRefGoogle Scholar
[13] Vanhellemont, J., Claeys, C., 1st Int. RTP Conf., RTP'93, editors Fair, R.B. and Lojek, B., p. 62, 1993 Google Scholar
[14] Hahn, S., 1st Int. RTP Conf., RTP'93, editors Fair, R.B. and Lojek, B., p. 88 (1993)Google Scholar
[15] Liu, R., Pai, C.S., Lu, C.Y., Sung, J.M., Tsai, N.S., Int. Symp. VLSI Techn. Syst. Appl., p. 20 (1993)Google Scholar
[16] Masetti, G., Severi, M., Solmi, S., IEEE Tr. El. Dev., 30, 764 (1983)CrossRefGoogle Scholar
[17] Garben, B., Orr-Arienzo, W.A., Lever, R.F., J. Electrochem. Soc., 133, 2151 (1986)CrossRefGoogle Scholar
[18] Solmi, S., Baruffaldi, F., Canteri, R., J. Appl. Phys., 69, 2135 (1991)CrossRefGoogle Scholar