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Rapid Thermal Annealing in Si

Published online by Cambridge University Press:  25 February 2011

T.E. Seidel ,
C.S. Pai ,
D.J. Lischner ,
D.M. Maher ,
R.V. Knoell ,
J.S. Williams ,
B.R. Penumalli  and
D.C. Jacobson
D.J. Lischner
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
D.M. Maher
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R.V. Knoell
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J.S. Williams
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
B.R. Penumalli
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
D.C. Jacobson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

Certain aspects of Rapid Thermal Annealing (RTA) are reviewed. Temperature considerations are discussed. The implant disorder removal rate is measured (5eV removal energy for As induced damage). Shallower defect-free junctions are obtained using RTA. Results of a ”Round Robin”-RTA annealing are presented, transient enhanced diffusion is not prominent for As. New results for the concentration enhanced diffusion of As are presented. Diffusion from the channeling-tai1 region of shallow boron diffusions is noted as a limiting factor for producing shallow p+-junctions. Other issues are briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 329
Copyright
Copyright © Materials Research Society 1985

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References

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