Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-24T17:38:06.643Z Has data issue: false hasContentIssue false
  • English
  • Français

Raman spectrum of group IV nanowires: influence of temperature

Published online by Cambridge University Press:  22 March 2011

J. Anaya ,
C. Prieto ,
J. Souto ,
J. Jiménez ,
A. Rodríguez ,
J. Sangrador  and
T. Rodríguez
J. Anaya
Affiliation:
Optronlab Group, Dpto. Física de la Materia Condensada, Centro I+D, Univ. de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
C. Prieto
Affiliation:
Optronlab Group, Dpto. Física de la Materia Condensada, Centro I+D, Univ. de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
J. Souto
Affiliation:
Optronlab Group, Dpto. Física de la Materia Condensada, Centro I+D, Univ. de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
J. Jiménez
Affiliation:
Optronlab Group, Dpto. Física de la Materia Condensada, Centro I+D, Univ. de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
A. Rodríguez
Affiliation:
Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, 28040 Madrid, Spain
J. Sangrador
Affiliation:
Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, 28040 Madrid, Spain
T. Rodríguez
Affiliation:
Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, 28040 Madrid, Spain
Get access

Abstract

Group IV semiconductor nanowires are characterized by Raman spectroscopy. The results are analyzed in terms of the heating induced by the laser beam on the nanowires. By solving the heat transport equation one can simulate the temperature reached by the NWs under the exposure to a laser beam. The results are illustrated with Si and Si1-xGex nanowires. Both bundles of nanowires and individual nanowires are studied. The main experimental conditions contributing to the nanowire heating are discussed.

Keywords

nanostructureRaman spectroscopySi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Group IV Semiconductor Nanostructures and Applications , 2011 , mrsf10-1305-aa12-03
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Cui, Y. and Lieber, C., Science 291, 851 (2001).Google Scholar
[2] Li, D., Wu, Y., Kim, P., Shi, L., Yang, P., Majumdar, A.; Appl.Phys.Lett.832934 (2003)Google Scholar
[3] Richter, H., Wang, Z.P., Ley, L.; Sol.St. Commun. 39, 625 (1981)Google Scholar
[4] Campbell, I.H., Fauchet, P.M.; Sol. St. Commun. 58, 739 (1986)Google Scholar
[5] Jimenez, J., de Wolf, I., and Landesman, J.P., in “Microprobe Characterization of Semiconductors”; vol. 17 of Optoelectronic Properties of Semiconductors and Superlattices, ed. by Jimenez, J. (Taylor and Francis, New York 2002), ch.2.R.Google Scholar
[6] Bhattacharyya, S., Samui, S. ; Appl. Phys. Lett. 84, 1564 (2004)Google Scholar
[7] Gupta, R., Xiong, Q., Adu, C.K., Kim, U.J., Eklund, P.C.; Nano Lett.3, 627 (2003)Google Scholar
[8] Scheel, H., Reich, S., Ferrari, A.C., Cantoro, M., Colli, A., Thomsen, C. ; Appl. Phys. Lett. 88, 233114 (2006)Google Scholar
[9] Adu, K.W., Gutiérrez, H.R., Kim, U.J., Eklund, P.C.; Phys.Rev.B 73, 155333 (2006)Google Scholar
[10] Torres, A., Martín-Martín, A., Martínez, O., Prieto, A.C., Hortelano, V., Jiménez, J., Rodríguez, A., Sangrador, J., Rodríguez, T.; Appl. Phys. Lett 96, 011904 (2010)Google Scholar
[11] Burke, H.H., Herman, I.P.; Phys.Rev.B 48, 15016 (1993)Google Scholar
[12] Nishimura, C., Imammura, G., Fujii, M., Kawashima, T., Saitoh, T., Hayashi, S.; Appl. Phys. Lett.93, 203101 (2008)Google Scholar
[13] Tsang, J. C., Mooney, P. M., Dacol, F., Chu, J. O.. J. Appl. Phys. 75, 8098 (1994).Google Scholar