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Raman Spectroscopy of Ferroelectric Thin Films

Published online by Cambridge University Press:  11 February 2011

R. S. Katiyar ,
A. Dixit ,
M. Jain ,
A. A. Savvinov  and
P. S. Dobal
R. S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931–3343
A. Dixit
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931–3343
M. Jain
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931–3343
A. A. Savvinov
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931–3343
P. S. Dobal
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931–3343
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Abstract

During a ferroelectric phase transition or domain rearrangement, ions or molecules in a ferroelectric material move in a highly cooperative manner from their initial lattice positions into the final positions they occupy and the collective response results into a “soft” lattice vibrational mode. Moreover, the structural changes are always accompanied by at least a few other changes in the normal mode behavior of the material. In the present work, Raman spectroscopy is conveniently employed to study such vibrational modes and other related phenomena in ferroelectric materials at the sub-microscale levels. We have investigated ferroelectric thin films of various lead and barium based perovskites prepared by sol-gel technique. The effect of processing conditions, A- and B- site substitutions, and size dependence on their Raman spectra were analyzed in terms of the structure-property correlations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U8.10
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Ho, J. J., Fang, Y. K., Wu, K. H., Hsieh, W. T., Chu, C. W., Huang, C. R., Ju, M.S., and Chang, C. P., IEEE Electron Device Lett., 19, 189 (1998).Google Scholar
2. Kingon, A. I., Maria, J. P., and Streiffer, S. K., Nature (London), 406, 1032 (2000).Google Scholar
3. Yu, Z., Ang, C., Guo, R., Bhalla, A. S., and Cross, L. E., Appl. Phys. Lett., 80, 1034 (2002).Google Scholar
4. Lemanov, V. V., Smirnova, E. P., and Tarakanov, E. A., Phys. Solid State, 39, 628 (1997).Google Scholar
5. Dobal, P.S. and Katiyar, R.S., J. Raman Spectroscopy, 33, 405 (2002).Google Scholar
6. Dixit, A., Savvinov, A.A., Majumder, S.B., Katiyar, R. S., Guo, R., and Bhalla, A. S., Mat. Res. Soc. Symp. Proc., 708, D4.4.1 (2002).Google Scholar
7. Jain, M., Majumder, S.B., Guo, R., Bhalla, A. S., and Katiyar, R.S., Mat. Lett., 56, 692 (2002).Google Scholar
8. Kholkin, A. L., Calzada, M. L., Ramos, P., Mendiola, J., and Setter, N., Appl. Phys. Lett., 69, 3602 (1996).Google Scholar
9. Yamamoto, T., Saho, M., Okazaki, K., and Goo, Ed., Jpn. J. Appl. Phys., Suppl., 26, 57 (1987).Google Scholar
10. Dobal, P.S., Dixit, A., and Katiyar, R. S., Yu, Z., Guo, R., and Bhalla, A. S., J. Appl. Phys., 89, 8085 (2001).Google Scholar
11. Zhang, W. F., Huang, Y. B., Zhang, M. S., and Liu, Z. G., Appl. Phys. Lett., 76, 1003 (2000).Google Scholar
12. Foster, C. M., Li, Z., Grimsditch, M., Chan, S. K., and Lam, D. J., Phys. Rev., B48, 10160 (1993).Google Scholar
13. Shirane, G., Axe, J.D., Harada, J., Phys. Rev., B2, 155 (1970).Google Scholar