Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-02T23:28:23.075Z Has data issue: false hasContentIssue false
  • English
  • Français

Quantum Effects At Gaas/AlxGa1−xJunctions

Published online by Cambridge University Press:  15 February 2011

A. C. Gossard
A. C. Gossard*
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974, (U.S.A.)
Get access

Abstract

Quantum effects occurring at interfaces between GaAs and AlxGa1−x As are reviewed. Electrons and holes can be confined to two-dimensional quantum states in thin semiconductor layers or at semiconductor heterointerfaces. The twodimensional states in GaAs/AlxGa1−xAs structures show strongly modified electrical and optical behavior relative to unconfined material, with the properties strongly dependent on the structural design.

Electrons confined in high mobility structures at selectively doped GaAs-AlxGa1−xAs heterointerfaces show a quantized Hall effect with an associated vanishing parallel resistance and, in high magnetic fields, an apparent electron crystallization.

Optical transitions between confined electron and hole states in quantum well thin layers form the basis of quantum well luminescence and for new non-linear optical logic structures.

All the quantum effects are sensitive to interfacial properties which are closely dependent on the conditions of epitaxial growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 279
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Chang, L. L., Esaki, L. and Tsu, R., Appl. Phys. Lett., 24 (1974) 593.Google Scholar
2 Dingle, R., Wiegmann, W. and Henry, C. H., Phys. Rev. Lett., 33 (1974) 827.Google Scholar
3 Abstreiter, G. and Ploog, K., Phys. Rev. Lett., 42 (1979) 1308.Google Scholar
4 Pinczuk, A., Storme, H. L., Dingle, R., Worlock, J. M., Wiegmann, W. and Gossard, A. C., Solid State Commun., 32 (1979) 1001.Google Scholar
5 Dingle, R., Stormer, H. L., Gossard, A. C. and Wiegmann, W., Appl. Phys. Lett., 33 (1978) 665.Google Scholar
6 Stormer, H. L., Dingle, R., Gossard, A. C., Wiegmann, W. and Sturge, M. D., Solid State Commun., 29 (1979) 705.CrossRefGoogle Scholar
7 Mimura, T., Hiyamizu, S., Fujii, T. and Nanbu, K., Jpn. J. Appl. Phys., 19 (1980) L225.Google Scholar
8 Stormer, H. L., Gossard, A. C., Wiegmann, W. and Baldwin, K., Appl. Phys. Lett., 39 (1981) 912.Google Scholar
9 Stormer, H. L., Gossard, A. C. and Wiegmann, W., Appl. Phys. Lett., 42 (1982) 707.Google Scholar
10 Tsui, D. C. and Gossard, A. C., Appl. Phys. Left., 38 (1981) 550.Google Scholar
11 Tsui, D. C., Stormer, H. L. and Gossard, A. C., Phys. Rev. B, 25 (1982) 1405.Google Scholar
12 von Klitzing, K., Dorda, G. and Pepper, M., Phys. Rev. Lett., 45 (1980) 494.CrossRefGoogle Scholar
13 Paalanen, M. A., Tsui, D. C. and Gossard, A. C., Phys. Rev. B, 25 (1982) 5566.Google Scholar
14 Tsui, D. C., Gossard, A. C., Field, B. F., Cage, M. E. and Dziuba, R. F., Phys. Rev. Lett., 48 (1982) 3.Google Scholar
15 Kazarinov, R. F. and Luryi, S., Phys. Rev., B, 25 (1982) 7626.Google Scholar
15a Luryi, S. and Kazarinov, R. F., Phys. Rev. B, Rapid Commun., 27 (1983) 1386.CrossRefGoogle Scholar
16 Tsui, D.C., Stormer, H. L. and Gossard, A. C., Phys. Rev. Lett., 48 (1982) 1559.Google Scholar
17 Stormer, H. L., Narayanamurti, V., Gossard, A. C. and Wiegmann, W., unpublished results, 1982.Google Scholar
18 Gossard, A. C., Wiegmann, W., Miller, R. C., Petroff, P. M. and Tsang, W. T., Collected Papers, 2nd. Int. Symp. on Molecular Beam Epitaxy and Related Clean Surface Techniques, Japan Society of Applied Physics, Tokyo, 1982, p. 39.Google Scholar
19 Drummond, T. J., Morkoc, H., Su, S. L., Fischer, R. and Cho, A. Y., Electron. Lett., 17 (1981) 870.Google Scholar
20 Miller, D. A. B., Chemla, D. S., Smith, P. W., Eilenberger, D. J., Gossard, A. C. and Tsang, W. T., Appl. Phys. Lett., 41 (1982) 679.CrossRefGoogle Scholar
21 Gibbs, H. M., Tarng, S. S., Jewell, J. L., Weinberger, D. A., Tai, K., Gossard, A. C., McCall, S. L., Passner, A. and Wiegmann, W., Appl. Phys. Lett., 41 (1982) 221.Google Scholar
22 Miller, R. C., Kleinman, D. A., Gossard, A. C. and Munteanu, O., Phys. Rev. B, 25 (1982) 6545.Google Scholar
23 Miller, R. C., Gossard, A. C., Tsang, W. T. and Munteanu, O., Solid State Commun., 43 (1982) 519.Google Scholar
24 Petroff, P. M., Weisbuch, C., Dingle, R., Gossard, A. C. and Wiegmann, W., Appl. Phys. Lett., 38 (1981) 965.Google Scholar
25 Tsang, W. T., Appl. Phys. Lett., 39 (1981) 786.CrossRefGoogle Scholar
26 Miller, R. C., Gossard, A. C., Tsang, W. T. and Munteanu, O., Phys. Rev. B, 25 (1982) 3871.Google Scholar