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The Quantitative Study of Trapped Charges in Nano-Scale Ge Islands probed by EFM Measurement

Published online by Cambridge University Press:  01 February 2011

Zhen Lin ,
Pavel Brunkov ,
Franck Bassani  and
Georges Bremond
Zhen Lin
Affiliation:
[email protected], Institut National des Sciences Appliquées, Institut des Nanotechnologies de Lyon, Villeurbanne, France
Pavel Brunkov
Affiliation:
[email protected], Technical Institute of the Russian Academy of Sciences, Saint-Pétersbourg, Russian Federation
Franck Bassani
Affiliation:
[email protected], Institut Matériaux Microélectronique Nanosciences de Provence, Marseille, France
Georges Bremond
Affiliation:
[email protected], Institut National des Sciences Appliquées, Institut des Nanotechnologies de Lyon, Villeurbanne, France
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Abstract

In this work, an individual Ge island on top of silicon dioxide layer has been charged by a conductive EFM tip and quantitatively characterized at room temperature. Electrons or holes were successfully injected and were trapped homogenously in the isolated nano-scale Ge island. In order to quantitatively study these trapped charges, a truncated capacitor model was used to approximate the real capacitance between the tip and island surface. The analytical expression of the quantity of trapped charges in isolated Ge island as a function of the EFM phase signal was deduced. Applying a tip bias for -7V during 30 seconds leads to an injection about 800 electrons inside an individual Ge island.

Keywords

nanostructureGeelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G06-12
Copyright
Copyright © Materials Research Society 2010

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