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Quantitative Photoreflectance Experiments on Indium Phosphide Surfaces and Structures

Published online by Cambridge University Press:  15 February 2011

S. Hildebrandt ,
J. Schreiber ,
R. Kuzmenko ,
A. Gansha ,
W. Kircher  and
L. Höring
S. Hildebrandt
Affiliation:
Martin-Luther-Universität, Fachbereich Physik, Halle, Germany, [email protected]
J. Schreiber
Affiliation:
Martin-Luther-Universität, Fachbereich Physik, Halle, Germany, [email protected]
R. Kuzmenko
Affiliation:
Martin-Luther-Universität, Fachbereich Physik, Halle, Germany, [email protected]
A. Gansha
Affiliation:
Martin-Luther-Universität, Fachbereich Physik, Halle, Germany, [email protected]
W. Kircher
Affiliation:
Martin-Luther-Universität, Fachbereich Physik, Halle, Germany, [email protected]
L. Höring
Affiliation:
Martin-Luther-Universität, Fachbereich Physik, Halle, Germany, [email protected]
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Abstract

Photoreflectance (PR) modulation spectroscopy is a widely used optical technique on GaAs but it has been applied much more rarely on InP being an equally important optoelectronic compound semiconductor. Typical PR spectral lineshapes in the fundamental gap region of various InP materials are investigated. Spectral components such as Franz-Keldysh oscillations, lowfield features, and epilayer interference phenomena are analyzed. Current applications concern the determination of the surface electric field, investigations of ion etching and hydrogenation processing, and the characterization of homo- and strained heteroepitaxial layers by means of synchronous phase and complex fitting analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 259
Copyright
Copyright © Materials Research Society 1996

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