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Pulsed Microwave Processing of High-TC Superconducting Films

Published online by Cambridge University Press:  25 February 2011

R. B. James ,
R. A. Alvarez ,
A. K. Stamper ,
X. J. Bao ,
T. E. Schlesinger ,
D. S. Ginley ,
K. F. McCarty ,
T. A. Friedmann  and
R. H. Stulen
R. B. James
Affiliation:
Sandia National Laboratories, Advanced Materials Research Department, Livermore, CA 94550
R. A. Alvarez
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
A. K. Stamper
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
X. J. Bao
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
T. E. Schlesinger
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
D. S. Ginley
Affiliation:
Sandia National Laboratories, Advanced Materials and Devices Department, Albuquerque, NM 87123
K. F. McCarty
Affiliation:
Sandia National Laboratories, Advanced Materials Research Department, Livermore, CA 94550
T. A. Friedmann
Affiliation:
Sandia National Laboratories, Advanced Materials Research Department, Livermore, CA 94550
R. H. Stulen
Affiliation:
Sandia National Laboratories, Advanced Materials Research Department, Livermore, CA 94550
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Abstract

We have used 2.0-μsec microwave pulses at a frequency of 2.856 GHz to rapidly heat thin amorphous yttrium-barium-copper-oxide (YBCO) films deposited onto silicon substrates. The samples were irradiated inside a WR-284 waveguide by single-pass TE10 pulses in a traveling wave geometry. X-ray diffractometry studies show that an amorphous-to-crystalline phase transition occurs for incident pulse powers exceeding about 6 MW, in which case the amorphous YBCO layer is converted to Y2BaCuO5. Microscopy of the irradiated film reveals that the phase transition is brought about by melting of the YBCO precursor film and crystallization of the molten layer upon solidification. Time-resolved in situ experiments of the microwave reflectivity (R) and transmissivity (T) show that there is an abrupt change in R for microwave pulse powers exceeding the melt threshold, so that measurements of R and T can be used to monitor the onset of surface melting.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 269: Symposium L – Microwave Processing of Materials III , 1992 , 187
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1.See, for example, Microwave Processing of Materials, Vol. 124, edited by Brooks, M. H., Chabinsky, I. J. and Sutton, W. H. (Materials Research Society, Pittsburgh, PA, 1988); and Microwave Processing of Materials 1I, Vol. 189, edited by W. B. Snyder, Jr., W. H. Sutton, M. F. Iskander, and D. L. Johnson (Materials Research Society, Pittsburgh, PA, 1991).Google Scholar
2.See, for example, James, R. B., Bolton, P. R., Alvarez, R. A., and Christie, W. H., in Mikrowellen and HF Magazine, Vol. 16, 332, (1990); and R. B. James, P. R. Bolton, R. A. Alvarez, W. H. Christie, and R. E. Valiga, J. Appl. Phys. 64, 2049 (1988).Google Scholar
3. Jackson, J. D., in Classical Electrodynamics, 2nd Edition (Wiley, New York, 1975), p. 298.Google Scholar