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Pulsed Laser Melting: The Effect of Implanted Solutes on the Resolidification Velocity

Published online by Cambridge University Press:  22 February 2011

G. J. Galvin ,
J. W. Mayer  and
P. S. Peercy
G. J. Galvin
Affiliation:
Department of Material Science, Cornell University, Ithaca, NY 14853;
J. W. Mayer
Affiliation:
Department of Material Science, Cornell University, Ithaca, NY 14853;
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

Transient electrical conductance has been used to measure the resolidification velocity in silicon containing implanted solutes. Nonequilibrium segregation of the solutes occurs during the rapid resolidification following pulsed laser melting. The velocity of the liquid-solid interface is observed to depend on the type and concentration of the solute. A 25% reduction in solidification velocity is observed for an implanted indium concentration of three atomic percent. Implanted oxygen is also shown to reduce the solidification velocity. The dependence of the velocity on solute concentration impacts a variety of segregation, trapping and supersaturated solution studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 111
Copyright
Copyright © Materials Research Society 1984

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References

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