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Pulsed Laser Deposition of Epitaxial Sr0.61Ba0.39Nb2O6 Thin Films for Waveguide Applications

Published online by Cambridge University Press:  15 February 2011

K.E. Youden ,
S. Schwyn Thöny ,
L. Hesselink  and
J.S. Harris Jr
K.E. Youden
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
S. Schwyn Thöny
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
L. Hesselink
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
J.S. Harris Jr
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
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Abstract

We report the epitaxial growth of Sr0.6iBa0.39Nb2O6 (SBN) thin films on MgO substrates by pulsed laser deposition. Rutherford backscattering analysis shows that the films have stoichiometric composition, identical to the target, and thicknesses in the range 200–400 nm. X-ray diffraction 2θ-scans indicate layers with the (001) orientation perpendicular to the substrate plane, and phi scans on the (221) plane reveal that the films have two pairs of in-plane orientations. The orientations correspond to a rotation of the SBN unit cell relative to the MgO unit cell of ± 18.6° and ± 30.9° respectively. Waveguide characterization shows waveguides supporting up to four modes and film refractive indices which compare well with those of bulk SBN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 173
Copyright
Copyright © Materials Research Society 1995

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References

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