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Pulsed Laser Deposition of Epitaxial LiNbO3 Films on Sapphire Substrates Using a Single Crystal Targets

Published online by Cambridge University Press:  15 February 2011

See-Hyung Lee ,
Tae W. Noh ,
Jai-Hyung Lee  and
Young-Gi Kim
See-Hyung Lee
Affiliation:
Department of Physics, Seoul National University, Seoul 151–742, Korea.
Tae W. Noh
Affiliation:
Department of Physics, Seoul National University, Seoul 151–742, Korea.
Jai-Hyung Lee
Affiliation:
Department of Physics, Seoul National University, Seoul 151–742, Korea.
Young-Gi Kim
Affiliation:
System Development Center, Korea Telecom Research Laboratories, Seoul 137–792, Korea.
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Abstract

Pulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 575
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Kanato, T., Kobayashi, Y., and Kubota, K., J. Appl. Phys. 62, 2989 (1987)Google Scholar
2. Rost, T.A., Rabson, T.A., Stone, B.A., Callahan, D.L., and Baumann, R.C., IEEE Trans. Ultrason. Ferroelectr. Freq. Control 38, 640 (1991)Google Scholar
3. Betts, R.A., and Pitt, C.W., Electron. Lett. 21, 960 (1985)Google Scholar
4. Yamada, A., Tamada, H., and Saitoh, M., Appl. Phys. Lett. 61, 2848 (1992)Google Scholar
5. Wernberg, A.A., Gysling, H.J., Filo, A.J., and Blanton, T.N., Appl Phys. Lett. 62, 946 (1993)Google Scholar
6. Shibata, Y., Kaya, K., Akashi, K., Kanai, M., Kawai, T., and Kawai, S., Appl. Phys. Lett. 61, 1000 (1992); inGoogle Scholar
Laser Ablation in Materials Processing: Fundamentals and Applications, edited by Braren, B., Dubowski, J.J., and Norton, D.P. (Mater. Res. Soc. Pro. 285, Pittsbergh, PA, 1992) pp. 361–366 Google Scholar
7. Marsh, A.M., Harkness, S.D., Qian, F., and Singh, R.K., Appl. Phys, Lett. 62, 952 (1993)Google Scholar
8. Liu, J. -M., Liu, Z.G., Zhu, S.N., and Wu, Z. C., Mater. Lett. 20, 35 (1994)Google Scholar
9. De Sario, M., Armenise, M.N., Canali, C., Camera, A., Mazzoldi, P., and Ceotti, G., J. Appl. Phys. 57, 1482 (1985)Google Scholar
10. Weis, R.S. and Gaylord, T.K., Appl. Phys. Lett. 37, 191 (1985)Google Scholar