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Pulsed Laser Deposition of CdTe, HgCdTe, and β-SiC Thin Films on Silicon

Published online by Cambridge University Press:  25 February 2011

D.B. Fenner ,
O. Li ,
P.W. Morrison ,
J. Cosgrove ,
L. Lynds ,
M.E. Johansson ,
B.R. Stoner ,
J.T. Glass ,
Peirong Xu  and
Hong Zhang
D.B. Fenner
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT
O. Li
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT
P.W. Morrison
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT
J. Cosgrove
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT
L. Lynds
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT
M.E. Johansson
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT
B.R. Stoner
Affiliation:
Dept. Mat. Sci. Eng., North Carolina State Univ., Raleigh, NC
J.T. Glass
Affiliation:
Dept. Mat. Sci. Eng., North Carolina State Univ., Raleigh, NC
Peirong Xu
Affiliation:
Dept. Materials Science, Northwestern Univ., Evanston, IL
Hong Zhang
Affiliation:
Dept. Materials Science, Northwestern Univ., Evanston, IL
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Abstract

The successful methods for laser ablation and deposition of epitaxial thin films of metal oxides, especially the high-temperature superconductors (HTSC), have been adapted to pulsed laser deposition (PLD) of the narrow-band compound semiconductor HgCdTe, and the wide-band semiconductor β-SiC. Useful film quality is readily obtained in both cases: the HgCdTe films on CdTe wafers function in IR photodetection and the 3-SiC is epitaxial on both Si (100) and (111) wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 235
Copyright
Copyright © Materials Research Society 1992

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References

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