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Pulsed Laser Deposition of Aluminum Tris-8-hydroxyquinline and TPD Thin Films

Published online by Cambridge University Press:  15 February 2011

Kenji Ebihara
Affiliation:
Department of Electrical Computer Engineering, and Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto, 860-8555, JAPAN
Pail-Kyun Shin
Affiliation:
Department of Electrical Computer Engineering, and Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto, 860-8555, JAPAN
Tamiko Ohshima
Affiliation:
Department of Electrical Computer Engineering, and Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto, 860-8555, JAPAN
Hiroshi Kurihara
Affiliation:
Department of Electrical Computer Engineering, and Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto, 860-8555, JAPAN
Tomoaki Ikegami
Affiliation:
Department of Electrical Computer Engineering, and Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto, 860-8555, JAPAN
Toshihisa Yamaguchi
Affiliation:
Kumamoto Technology and Industry Foundation, 2081-10 Tahara, Mashiki, 861-2202, JAPAN
Takamasa Sakai
Affiliation:
Kumamoto Technology and Industry Foundation, 2081-10 Tahara, Mashiki, 861-2202, JAPAN
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Abstract

Thin films of low molecular weight electroluminescence (EL) materials, Alq3 (aluminum tirs-8-hydoroxyquinline), TPD (N,N'-diphenyl-N,N'-bis (3methylphenyl)-(1,1'-biphenyle)-4, 4'-diamine) were deposited by pulsed laser ablation (PLA) method using KrF excimer laser and Nd:YAG laser. Optical absorption property, surface morphology and photoluminescence of the films were investigated. Alq3 films by Nd:YAG laser show slight absorption at around 400 nm, and TPD films by either KrF laser or Nd:YAG laser showed absorption at 320 nm and 360 nm. It was found that TPD thin films for EL devices can be deposited by PLAmethod usig Nd:YAG laser.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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