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Pulsed Laser Annealing of Aluminum*

Published online by Cambridge University Press:  15 February 2011

W. R. Wampler ,
D. M. Follstaedt  and
P. S. Peercy
W. R. Wampler
Affiliation:
Sandia National Laboratoriesϯ, Albuquerque, New Mexico 87185, USA
D. M. Follstaedt
Affiliation:
Sandia National Laboratoriesϯ, Albuquerque, New Mexico 87185, USA
P. S. Peercy
Affiliation:
Sandia National Laboratoriesϯ, Albuquerque, New Mexico 87185, USA
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Abstract

Pulsed ruby laser irradiation of unimplanted single crystal and implanted polycrystalline Al has been studied with ion beam analysis and TEM. The results show that Al is melted to a depth of ∼ 0.9 μm with a 4.2 J/cm2 , 15 nsec pulse, and that vacancies are quenched into Al during resolidification. Diffusion of Zn in liquid Al is observed, and a melt time of ∼ 65 nsec is estimated for a 3.8 J/cm2, 30 nsec pulse. The observations are in reasonable agreement with calculations of sample temperature and melt times. We observe no precipitation of AlSb in liquid Al for Sbimplanted Al, and conclude that the nucleation time satisfies 50 nsec ≲ tnuc ≲ 200 nsec. We find no evidence for amorphous Al after irradiation of single crystal Al with energies ≳ 1.5 J/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 567
Copyright
Copyright © Materials Research Society 1981

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Footnotes

ϯ

A U. S. Department of Energy facility.

*

This work was supported by the U. S. Department of Energy under Contract DE-AC04-76-DP00789.

References

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