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Pulsed Excimer Laser Deposition and Rapid Thermal Annealing of Ferroelectric Pb(Zr0.52Ti0.48)O3 Thin Films on Si-on-Insulator

Published online by Cambridge University Press:  15 February 2011

Yiqing Chen ,
Lirong Zheng ,
Chenglu Lin ,
Xinglong Xu  and
Shichang Zou
Yiqing Chen
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
Lirong Zheng
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
Chenglu Lin
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
Xinglong Xu
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
Shichang Zou
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
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Abstract

Stoichiometric films of Pb(Zr0.52Ti0.48)O3 (PZT) were successfully deposited on Si-on-Insulator (SOI) substrates, with and without a platinum electrode, by an ArF (λ=193nm) pulsed excimer laser. Rapid thermal annealing (RTA) was used to transform amorphous or pyrochlore phase into ferroelectric perovskite phase. The film structure, composition, morphology, interface and electrical properties were studied by x-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (XTEM) and Sawyer-Tower circuit, respectively. It was found that there was a narrow operational window of annealing time for PZT films at fixed annealing temperature. Pure ferroelectric perovskite phase with mainly (100) and (110) orientations could be obtained in PZT films on Pt coated SOI substrates. The interfaces between the PZT films and both Si and Pt//Si were very abrupt, indicating there was no interdiffusion between them. Ferroelectric hysteresis loops showed a remanent polarization of 15μC/cm2 and a coercive field of 50KV/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 563
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

[1] Vasant Kumar, C.V.R., Sayer, M., et al., Appl. Phys. Lett., 58, 1161 (1991)Google Scholar
[2] Yamazaki, H., Tsuyama, T., et al., Jpn. J. Appl. Phys. 31B, 2995, (1992)Google Scholar
[3] Kang, J., Yoko, T., et al., Jpn. J. Appl. Phys., 30B, 2182 (1991)Google Scholar
[4] Dijkkamp, D., Venkatesan, T., et al., Appl. Phys. Lett., 51, 619 (1987)Google Scholar
[5] Wu, X.D., Dijkkamp, D., et al., Appl. Phys. Lett., 51, 861 (1987)Google Scholar
[6] Soy, D. and Krupanidhi, S.B., Appl. Phys. Lett., 61, 2057 (1992)Google Scholar
[7] Tam, A.C., Leng, W.P., et al., J. Appl. Phys., 69, 2072 (1991)Google Scholar
[8] Doll, G.L., Shell, J.A., et al., Phys. Rev. B, 43, 6816 (1991)Google Scholar
[9] Hosack, H.H., in Proc, the Fifth International Symposium on Silicon-on-Insulation Technology and Devices, “Electronics and Dielectrics and Insulation Divisions”, 92–13,(1992)Google Scholar
[10] Lin, C., Yu, Y., et al., Science in China, A33, 95 (1991)Google Scholar
[11] Cullity, B.D., Elements of X-ray Diffraction, 2nd ed. p. 102 (Addison-Wesley, New York, 1987)Google Scholar