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Pt/Au and W/Pt/Au Schottky Contacts to Bulk n-ZnO.

Published online by Cambridge University Press:  26 February 2011

Kelly Ip ,
Brent Gila ,
Andrea Onstine ,
Eric Lambers ,
Young-Woo Heo ,
David Norton ,
Stephen Pearton ,
Jeffrey LaRoche  and
Fan Ren
Kelly Ip
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, Florida
Brent Gila
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, Florida
Andrea Onstine
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, Florida
Eric Lambers
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, Florida
Young-Woo Heo
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, Florida
David Norton
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, Florida
Stephen Pearton
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, Florida
Jeffrey LaRoche
Affiliation:
Chemical Engineering, University of Florida, Gainesville, Florida.
Fan Ren
Affiliation:
Chemical Engineering, University of Florida, Gainesville, Florida.
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Abstract

UV-ozone cleaning prior to metal deposition of either e-beam Pt contacts or sputtered W contacts on n-type single-crystal ZnO is found to significantly improve their rectifying characteristics. Pt contacts deposited directly on the as-received ZnO surface are Ohmic but show rectifying behavior with ozone cleaning. The Schottky barrier height of these Pt contacts was 0.70 eV, with ideality factor of 1.5 and a saturation current density of 6.2 × 10−6 A·cm−2. In contrast, the as-deposited W contacts are Ohmic, independent of the use of ozone cleaning. Post-deposition annealing at 700 °C produces rectifying behavior with Schottky barrier heights of 0.45 eV for control samples and 0.49 eV for those cleaned with ozone exposure. The improvement in rectifying properties of both the Pt contacts is related to removal of surface carbon contamination from the ZnO.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B10.1
Copyright
Copyright © Materials Research Society 2005

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