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Properties of Interfaces between Superlattice Heterostructures and Uniform Alloy Materials as Realized by Impurity Induced Disordering
Published online by Cambridge University Press: 28 February 2011
Abstract
In this paper present experimental results on the quality of AIGaAs material after high concentrations of impurities have been introduced for the purpose of impurity induced disordering. A comparison between Zn and Si diffusion is presented, and the nature of the transition region between uniform alloy and as-grown periodic structure has been characterized both experimentally and theoretically. Device implications of these observations is discussed.
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- Copyright © Materials Research Society 1990
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