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Properties of GaN Homoepitaxial Layers Grown on GaN Epitaxial Wafers

Published online by Cambridge University Press:  10 February 2011

V. Dmitriev ,
A. Nikolaev ,
A. Cherenkov ,
D. Tsvetkov ,
S. Stepanov ,
N. Kuznetsov ,
I. Nikitina ,
A. Kovarsky ,
M. Yagovkina  and
V. Davidov
V. Dmitriev
Affiliation:
loffe Institute, St. Petersburg, Russia MSRCE, Howard University, Washington, DC, USA TDI, Inc., Gaithersburg, MD, USA
A. Nikolaev
Affiliation:
loffe Institute, St. Petersburg, Russia
A. Cherenkov
Affiliation:
Crystal Growth Research Center, St. Petersburg, Russia
D. Tsvetkov
Affiliation:
Crystal Growth Research Center, St. Petersburg, Russia
S. Stepanov
Affiliation:
Crystal Growth Research Center, St. Petersburg, Russia loffe Institute, St. Petersburg, Russia
N. Kuznetsov
Affiliation:
loffe Institute, St. Petersburg, Russia
I. Nikitina
Affiliation:
loffe Institute, St. Petersburg, Russia
A. Kovarsky
Affiliation:
Mekhanobr-Analit Company, St. Petersburg, Russia
M. Yagovkina
Affiliation:
Mekhanobr-Analit Company, St. Petersburg, Russia
V. Davidov
Affiliation:
loffe Institute, St. Petersburg, Russia
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Abstract

The lack of GaN substrates is a limiting factor for the development of III-V nitride devices.Recently we proposed to use GaN/SiC epitaxial wafers, consisting of thin GaN layer depositedby hydride vapor phase epitaxy (HVPE) on SiC wafer, as substrates for subsequent growth of IIIVnitrides and devices development. These wafers are attractive to be used as substrates for GaNdevice fabrication because the GaN-based device structures can be grown on these wafers byhomoepitaxy without any buffer layer. Due to high SiC thermoconductivity and cleavagepossibility, these wafers are especially attractive for high-power electronic and optoelectronicapplications. In this paper, we focus on crystal structure, optical and electrical properties of GaNhomoepitaxial layers and p-n structures grown by HVPE on GaN/SiC epitaxial wafers. Newtypes of III-V nitride epitaxial wafers are described, insulating GaN/SiC epitaxial wafers andAIN/SiC epitaxial wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 451
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Melnik, Yu., Nikolaev, A., Stepanov, S., Nikitina, I., Vassilevski, K., Ankudinov, A., Musikhin, Yu. and Dmitriev, V., in Silicon Carbide, III-Nitride and Related Materials, edited by Pensl, G., Morkoc, H., Monemar, B., and Janzen, E. (Materials Science Forum Vols. 264–268, Trans Tech Publications, Switzerland 1998), p. 1121–1124.Google Scholar
2. Melnik, Yu., Nikolaev, A., Nikitina, I., Vasilevski, K., Dmitriev, V., in Nitride Semiconductors edited by Ponce, F. A., DenBaars, S. P., Meyer, B. K., Nakamura, S., Strite, S. (Mater. Res. Soc. Proc., 468 Pittsburgh, PA 1998), p. 269–274.Google Scholar
3. Nikolaev, A. E., Melnik, Yu. V., Kuznetsov, N. I., Strelchuk, A. M., Kovarsky, A. P., Vassilevski, K. V., and Dmitriev, V. A., in Nitride Semiconductors, edited by Ponce, F. A., DenBaars, S. P., Meyer, B. K., Nakamura, S., Strite, S. (Mater. Res. Soc. Proc., 468 Pittsburgh, PA 1998),.251–256.Google Scholar
4. Melnik, Yu., Nikolaev, A., Stepanov, S., Zubrilov, A., Nikitina, I., and Dmitriev, V., Book of Abstracts of the E MRS Spring Meeting, p. L22 (1997).Google Scholar
5. Takahashi, N., Matsumoto, R., Koukitu, A., and Seki, H., Jpn. J. Appl. Phys., 36, p. L601 (1997).Google Scholar
6. Perkins, N. R., Horton, M. N., Bandic, Z. Z., McGill, T. C., and Kuech, T. F., in Gallium Nitride and Related Materials edited by Ponce, F. A., Dupuis, R. D., Nakamura, S., Edmond, J. A. (Mater. Res. Soc. Proc., 395, Pittsburgh, PA 1996), p. 243.Google Scholar
7. Molnar, R. J., Gotz, W., Romano, L. T., and Jonson, N. M., J. Cryst. Growth, 178 p. 147 (1997).Google Scholar
8. Usui, A., Sunakawa, H., Sakai, A., and Yamaguchi, A., Jpn. J. Appl. Phys., 36, p. L503 (1997).Google Scholar
9. TDI, Inc., Gaithersburg, MD 20877.Google Scholar
10. Melnik, Yu. V., Nikitina, I. P., Zubrilov, A. S., Sitnikova, A. A., Dmitriev, V. A., Inst. Phys. Conf. Ser. 142, p. 863 (1996).Google Scholar
11. Zubrilov, A. S., Mel'nik, Yu. V., Tsvetkov, D. V., Bugrov, V. E., Nikolaev, A. E., Stepanov, S. I., and Dmitriev, V. A., Semiconductors, 31 (5), p.523–526 (1997).Google Scholar
12. Mel'nik, Yu. V., Nikitina, I. P., Nikolaev, A. E., Dmitriev, V. A., Diamond and Related Materials, 6, p. 1532–1535 (1997).Google Scholar
13. Cheng, T. S., Foxon, C. T., Ren, G. B., Orton, J. W., Melnik, Yu. V., Nikitina, I. P., Nikolaev, A. E., Novikov, S. V. and Dmitriev, V. A., Semicond. Sci. Technol., 12, p. 917–920 (1997).Google Scholar
14. Davydov, V. Yu., Averkiev, N. S., Goncharuk, I. N., Nelson, D. K., Nikitina, I. P., Polkovnikov, A. S., Smirnov, A. N., Jacobson, M. A., and Semchinova, O. K., J. Appl. Phys., 82, p.5097 (1997).Google Scholar