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Properties of Gallium Selenide Doped with Sulfur

Published online by Cambridge University Press:  26 February 2011

Valeriy G. Voevodin ,
Svetlana A. Bereznaya ,
Zoya V. Korotchenko ,
Aleksandr N. Morozov ,
Sergey Yu. Sarkisov ,
Nils C. Fernelius  and
Jonathan T. Goldstein
Valeriy G. Voevodin
Affiliation:
Siberian Physico-Technical Institute, 1 Revolution Sq. 634050, Tomsk, Russia
Svetlana A. Bereznaya
Affiliation:
Siberian Physico-Technical Institute, 1 Revolution Sq. 634050, Tomsk, Russia
Zoya V. Korotchenko
Affiliation:
Siberian Physico-Technical Institute, 1 Revolution Sq. 634050, Tomsk, Russia
Aleksandr N. Morozov
Affiliation:
Siberian Physico-Technical Institute, 1 Revolution Sq. 634050, Tomsk, Russia
Sergey Yu. Sarkisov
Affiliation:
Siberian Physico-Technical Institute, 1 Revolution Sq. 634050, Tomsk, Russia
Nils C. Fernelius
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate, AFRL/MLPSO Wright-Patterson Air Force Base, Dayton Ohio, 45433–7707, USA
Jonathan T. Goldstein
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate, AFRL/MLPSO Wright-Patterson Air Force Base, Dayton Ohio, 45433–7707, USA
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Abstract

This paper presents the results of investigations on the influence of sulfur doping on properties of gallium selenide crystals, grown by the Bridgman method from melts with sulfur content of 0.01–3 mass %, using the Hall effect, optical absorption, photoconductivity and microhardness measurements on GaSe: S. The results obtained are explained by assuming the formation of solid solutions of GaSxSe1−x and the presence of the competitive processes of point defects and structural disorder formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B9.3
Copyright
Copyright © Materials Research Society 2005

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References

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