Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-28T09:30:45.014Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Digital Aluminum Gallium Nitride Alloys Grown via Metal Organic Vapor Phase Epitaxy

Published online by Cambridge University Press:  31 January 2011

L. E. Rodak  and
D Korakakis
L. E. Rodak
Affiliation:
[email protected], West Virginia University, Lane Dept. of Computer Science and Electrical Engineering, PO Box 6109, Morgantown, West Virginia, 26506, United States
D Korakakis
Affiliation:
[email protected], West Virginia University, Lane Department of Computer Science and Electrical Engineering, Morgantown, West Virginia, United States
Get access

Abstract

Deep Ultra Violet (UV) emitters are of particular interest for applications including, but not limited to, biological detection and sterilization. Within the III-Nitride material system, Aluminum Gallium Nitride (AlxGa1-xN) alloys are the most promising for UV device fabrication due to the wide, direct band gap. The growth of high quality AlxGa1-xN alloys via Metal Organic Vapor Phase Epitaxy (MOVPE) is challenging due to large sticking coefficient of the Al species compared to that of Ga and also the high reactivity of Al precursors. As a result, films are often characterized by large dislocation densities, cracks, and poor conductivity. Digital alloy growth, or Short Period Superlattices (SPS), consisting of layers of binary or ternary alloys with a period thickness of a few monolayers has been shown to be a viable means of growing high quality ternary alloys via Metal Organic Vapor Phase Epitaxy (MOVPE). In certain materials, such as AlGaInP, the electronic properties of digitally grown alloys differ considerably from the equivalent random alloy. Specifically, the bandgap has been shown to differ significantly from the equivalent random alloy. As a result, digital alloy growth presents the potential to further engineer material properties. However, the influence of digital growth on the electronic properties of III-Nitride alloys has not been extensively characterized. This study focuses on Aluminum Gallium Nitride (AlxGa1-xN) alloys grown using a digital technique via MOVPE. The influence of the growth technique over a wide range of compositions is reported along with the electronic properties.

Keywords

III-Vmetalorganic depositionelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I05-05
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Hawkridge, M. E., Liliental-Weber, Z., Kim, H. Jin, Choi, S., Yoo, D., Ryou, J., and Dupuis, R.. Appl. Phys. Lett. 94, 071905 (2009).10.1063/1.3086280Google Scholar
2 Son, J., Heo, D., Choi, W., Han, I., Lee, J., Kim, J., Chang, K., and Lee, Y.. IEEE International Semiconductor Device Research Symposium, Dec. 7-9, 430 (2005).Google Scholar
3 Kandaswamy, P. K., Bougerol, C., Jalabert, D., Ruterana, P., and Monroy, E.. J. Appl. Phys. 106, 013526 (2009).10.1063/1.3168431Google Scholar
4 Kwon, O., Lin, Y., Doeckl, J., and Ringel, S.. J. Electronic Materials, 34, 1301 (2005).Google Scholar
5 Mourd, C., Gianardi, D., Malloy, K., and Kaspi, R.. J. Appl. Phys. 88, 5543 (2000).Google Scholar
6 Newman, P., Pamulapati, J., Shen, H., Taysing-Lara, M., Liu, J., Chang, W., Simonis, G., Koley, B., Dagenais, M., Feld, S., and Loehr, J.. J. Vac. Sci. Technol. B., 18, 1619 (2000)Google Scholar
7 Kasapi, R., and Donati, G.. J. Cryst. Growth 251, 515 (2003).Google Scholar
8 Khan, M. Asif, Kuznia, J. N., Olson, D. T., George, T., and Pike, W. T., Appl. Phys. Lett. 63, 3470 (1993).Google Scholar
9 Ambacher, O., J. Phys. D: Appl. Phys. 31, 2653 (1998).10.1088/0022-3727/31/20/001Google Scholar