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The Properties Of a-Si:H/c-Si Heterostructures Prepared By 55 kHz Pecvd For Solar Cell Application

Published online by Cambridge University Press:  10 February 2011

B. G Budaguan ,
A. A. Aivazov ,
A. A. Sherchenkov ,
A. V Blrjukov ,
V. D. Chernomordic  and
J. W. Metselaar
B. G Budaguan
Affiliation:
Moscow Institute of Electronic Technology, 103498 Moscow, RUSSIA, [email protected]
A. A. Aivazov
Affiliation:
UniSil Corp. 401 National Av, Mountain View, CA, 94043 USA
A. A. Sherchenkov
Affiliation:
Moscow Institute of Electronic Technology, 103498 Moscow, RUSSIA, [email protected]
A. V Blrjukov
Affiliation:
Moscow Institute of Electronic Technology, 103498 Moscow, RUSSIA, [email protected]
V. D. Chernomordic
Affiliation:
Institute of Microelectronics, Russian Academy of Sciences, Yaroslavl', 150007 RUSSIA
J. W. Metselaar
Affiliation:
University of Technology, Mekelweg 4, 2628 CDDelft, NETHERLANDS
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Abstract

In this work a-Si:H/c-Si heterostructures with good electronic properties of a-Si:H were prepared by 55 kHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Currentvoltage and capacitance-voltage characteristics of a-Si:H/c-Si heterostructures were measuredto investigate the influence of low frequency plasma on the growing film and amorphous silicon/crystalline silicon boundary. It was established that the interface state density is low enough for device applications (<2.1010 cm−2). The current voltage measurements suggest that, when forward biased, space-charge-limited current determines the transport mechanism in a- Si:H/c-Si heterostructures, while reverse current is ascribed to the generation current in a-Si:H and c-Si depletion layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 303
Copyright
Copyright © Materials Research Society 1998

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