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The Properties of a P-Implanted GaN Light-Emitting Diode

Published online by Cambridge University Press:  11 February 2011

J. Kikawa ,
S. Yoshida  and
Y. Itoh
J. Kikawa
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
S. Yoshida
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
Y. Itoh
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
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Abstract

Electroluminescence measurements of P-implanted GaN light-emitting diodes were performed. The measured peak densities of P in the GaN were 5×10 cm−3 and 4×10 cm−3 based on secondary ion mass spectroscopy. The EL spectra had a broad blue-band emission at the peak energy from around 2.8 eV to 3.3 eV and yellow-band emission at an energy centered at 2.2 eV. The blue-band emission could decompose into two components at energy positions of 2.9 eV and 3.2 eV. The former component is considered to be emission due to the recombination of the bounding exciton by P atoms, known as an isoelectronic trap in GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L6.20
Copyright
Copyright © Materials Research Society 2003

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References

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