Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Ohta, Takeo
and
Ovshinsky, Stanford R.
2003.
Photo‐Induced Metastability in Amorphous Semiconductors.
p.
310.
Ovshinsky, S.R.
2005.
Encyclopedia of Materials: Science and Technology.
p.
1.
Huang, S.Y.
Zhao, Z.J.
and
Sun, Z.
2006.
Investigation of phase changes in Ge1Sb4Te7 films by single ultra-fast laser pulses.
Applied Physics A,
Vol. 82,
Issue. 3,
p.
529.
Grössinger, Roland
Mohn, Peter
Ranno, Laurent
Ohta, Takeo
and
Weber, Harald W.
2007.
Alloy Physics.
p.
861.
Siegel, J.
Puerto, D.
Solis, J.
Afonso, C.N.
Bez, R.
Pirovano, A.
and
Wiemer, C.
2007.
Amorphization dynamics of Ge<inf>2</inf>Sb<inf>2</inf>T3<inf>5</inf> films under nano- and femtosecond laser pulse irradiation.
p.
1.
Shima, Takayuki
Nakano, Takashi
and
Tominaga, Junji
2007.
Effect of SiO2 Addition to PtOx Recording Layer of Super-Resolution Near-Field Structure Disc.
Japanese Journal of Applied Physics,
Vol. 46,
Issue. 6S,
p.
3912.
Ohta, Takeo
2011.
Phase Change Memory and Breakthrough Technologies.
IEEE Transactions on Magnetics,
Vol. 47,
Issue. 3,
p.
613.
Oosthoek, J. L. M.
Attenborough, K.
Hurkx, G. A. M.
Jedema, F. J.
Gravesteijn, D. J.
and
Kooi, B. J.
2011.
Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory.
Journal of Applied Physics,
Vol. 110,
Issue. 2,
Kooi, B.J.
Oosthoek, J.L.M.
Verheijen, M.A.
Kaiser, M.
Jedema, F.J.
and
Gravesteijn, D.J.
2012.
Nanostructure–property relations for phase‐change random access memory (PCRAM) line cells.
physica status solidi (b),
Vol. 249,
Issue. 10,
p.
1972.
Deng, Changmeng
Geng, Yongyou
Wu, Yiqun
Wang, Yang
and
Wei, Jinsong
2013.
Adhesion effect of interface layers on pattern fabrication with GeSbTe as laser thermal lithography film.
Microelectronic Engineering,
Vol. 103,
Issue. ,
p.
7.