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Progress in Monolithic Photonic Integration Using Quantum Well Shape Modification Enhanced by Ion Implantation

Published online by Cambridge University Press:  10 February 2011

Emil S. Koteles
Emil S. Koteles*
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada KIA 0R6, [email protected]
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Abstract

Progress in the development of ion implantation enhanced quantum well shape modification as a technique for monolithically integrating optoelectronic devices of varying functionalities is reviewed. Fundamental issues related to the physics of the technique, both material issues and device issues, are considered and the performance of both discrete and integrated devices is discussed. The main conclusion of this review is that there are no inherent drawbacks to the utilization of this technique and some serendipitous advantages but that more work on reproducibility and reliability is required to ensure commercial viability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 129
Copyright
Copyright © Materials Research Society 2000

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