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μτ Products of 10−6 cm2V−1 Deduced from Eleverse-Bias Dependence of Carrier-Collection Measurements in High Drift Mobility a-Si:H

Published online by Cambridge University Press:  15 February 2011

Gautam Ganguly  and
Akihisa Matsuda
Gautam Ganguly
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba-shi, Ibaraki, 305, Japan
Akihisa Matsuda
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba-shi, Ibaraki, 305, Japan
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Abstract

The room temperature hole drift mobility measured by the ‘time-of-flight’ technique can be increased to 0.5 cm2/Vs with a valence band tail width of 25meV by optimizing the ion impingement energy during film growth using a triode configured PECVD reactor. The reverse bias dependence of the carrier collection in Au Schottky diodes formed on these specimens show significantly improved carrier collection which can be approximately quantified using the C-V measured voltage dependent depletion widths to yield μτ≈10−6cm2V−1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 473
Copyright
Copyright © Materials Research Society 1995

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References

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