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Production of Sapphire Blanks and Substrates for Blue LEDs and LDs

Published online by Cambridge University Press:  11 February 2011

Chandra P. Khattak ,
Frederick Schmid ,
Paul J. Guggenheim ,
Maynard B. Smith ,
Henry H. Rogers  and
Kurt Schmid
Chandra P. Khattak
Affiliation:
Crystal Systems Inc., 27 Congress Street Salem, MA 01970
Frederick Schmid
Affiliation:
Crystal Systems Inc., 27 Congress Street Salem, MA 01970
Paul J. Guggenheim
Affiliation:
Crystal Systems Inc., 27 Congress Street Salem, MA 01970
Maynard B. Smith
Affiliation:
Crystal Systems Inc., 27 Congress Street Salem, MA 01970
Henry H. Rogers
Affiliation:
Crystal Systems Inc., 27 Congress Street Salem, MA 01970
Kurt Schmid
Affiliation:
Crystal Systems Inc., 27 Congress Street Salem, MA 01970
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Abstract

The Heat Exchanger Method (HEM) of crystal growing was combined with the Fixed Abrasive Slicing Technology (FAST) to produce low-cost, high-quality sapphire substrates for deposition of the GaN family of compounds. Production quantities of 2-inch diameter blanks have been supplied, and 3-inch diameter material has been qualified. Current technology can be used to prepare sapphire blanks up to 6-inch diameter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.39
Copyright
Copyright © Materials Research Society 2003

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References

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