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Processing and Characterization of HgBrxI2−x Radiation Detectors

Published online by Cambridge University Press:  21 February 2011

C. Zhou ,
M. R. Squillante ,
L. P. Moy  and
P. Bennett
C. Zhou
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt St., Watertown, MA 02172
M. R. Squillante
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt St., Watertown, MA 02172
L. P. Moy
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt St., Watertown, MA 02172
P. Bennett
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt St., Watertown, MA 02172
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Abstract

This paper reports our recent work on the crystal processing, structural and optical characterization of HgBrxI2−x nuclear radiation detectors. To understand the electrical and optical properties of the detectors, we measured the energy gap of HgBrxI2−x as a function of the Br/I ratio. The energy band of this ternary semiconductor compound can be modulated from 2. 1eV (HgI2) to 3.4eV (HgBr2) by adjusting its chemical composition. This energy scope covers a wavelength spectrum between 365nm and 596nm, much of the visible spectrum. Nuclear and photoconductive detectors were fabricated from HgBrxI2−x single crystals and the responses of these devices were investigated with different radiation sources (241Am, 137Cs).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 357
Copyright
Copyright © Materials Research Society 1993

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References

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