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Process Windows of Titanium, Cobalt and Nickel Silicide In Deep Submicron Poly-Si Lines

Published online by Cambridge University Press:  10 February 2011

M. C. Poon ,
F. Deng ,
C. H. Ho ,
M. Chan  and
S. S. Lau
M. C. Poon
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093–0407
F. Deng
Affiliation:
Department of Electrical & Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
C. H. Ho
Affiliation:
Department of Electrical & Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
M. Chan
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093–0407
S. S. Lau
Affiliation:
Department of Electrical & Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
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Abstract

Low resistivity (∼15μΩ-cm) TiSi2, CoSi2 and NiSi lines have been shown to be thermally stable and show no linewidth dependence after ∼850°C, 800°C and 700°C/1 hour annealing on poly-Si (B, As, and P-doped) with linewidths down to ∼0.43, 0.42 and 0.15 μm. Better thermal stability of silicides might be correlated to the larger poly grains formed after high dose implant and post-implant anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 411
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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