Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-01-27T02:45:35.433Z Has data issue: false hasContentIssue false
  • English
  • Français

Probing Electronic Properties of dendritic Ruthenium Complex bound to Single Walled Carbon Nanotubes

Published online by Cambridge University Press:  01 February 2011

Harsh Chaturvedi  and
Jordan Poler
Harsh Chaturvedi
Affiliation:
[email protected], UNC Charlotte, Physics and Optical Sciences, 9201 University City Blvd., Charlotte, NC, 28223, United States
Jordan Poler
Affiliation:
[email protected], UNC Charlotte, Chemistry, 9201 University City Blvd., Charlotte, NC, 28223, United States
Get access

Abstract

We have functionalized single walled carbon nanotubes (SWNTs) using ruthenium centered organometallic supramolecular dendritic complexes. These dendrimers have multiple binding sites with chemically specified chirality. Most importantly, they are mechanically rigid. We have fabricated field effect transistors (FET) using these functionalized SWNTs. Devices were processed with standard optical lithography and high resolution e-beam lithography. We are using FET response of these devices to study charge injection into the nanotubes and the resultant effect on the tube's transport properties. Organometallic based molecular adsorbents onto the nanotubes effect the transistor response. These functionalized tubes change their majority carriers from holes to electrons in these FETs. We believe this is due to charge transfer from the metal center through the ligand and finally onto the nanotube. This results in the potential for optically altering the carrier density, and therefore the transport properties of the nanotubes.

Keywords

electrical propertieslithography (deposition)organometallic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 938: Symposium N – Molecular-Scale Electronics , 2006 , 0938-N07-09
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Iijima, S., “Helical microtubules of graphitic carbon,” Nature, vol. 354, pp. 56–58, 1991.Google Scholar
[2] Dresselhaus, M. S., Dresselhaus, G., and Avouris, P., Ed. Carbon Nanotubes: Synthesis, Structure Properties and Applications Berlin, Germany: Springer-Verlag, 2001.Google Scholar
[3] Tans, S., Verschueren, S., and Dekker, C., “Room-temperature transistor based on single carbon nanotube,” Nature, vol. 393, pp. 49–52, 1998.Google Scholar
[4] Martel, R., Schmidt, T., Shea, H. R., Hertel, T., and Avouris, P., “Single and multi-wall carbon nanotube field-effect transistors,” Appl. Phys. Lett., vol. 73, pp. 2447–2449, 1998.Google Scholar
[5] Martel, R., Wong, H.-S. P., Chan, K., and Avouris, P., “Carbon nanotube field-effect transistors for logic applications,” in Proc. IEDM 2001, 2001, pp. 159–161.Google Scholar
[6]Carrillo, A.; Swartz, J.A.; Gamba, J.M.; Kane, R.S.; Chakrapani, N.; Wei, B.Q.; Ajayan, P.M. “Noncovalent functionalization of graphite and carbon nanotubes with polymer multilayers and gold nanoparticles” NANO LETTERS 3 (10): 1437–1440 OCT 2003 Google Scholar
[7]Nepal, D., Sohn, JI, Aicher, WK et al “Supramolecular conjugates of carbon nanotubes and DNA by a solid-state reaction” BIOMACROMOLECULES 6 (6): 2919–2922 NOV-DEC 2005 Google Scholar
[8] Chaturvedi, H.; Poler, J.C.; “Binding of Rigid Dendritic Ruthenium Complexes to Carbon Nanotubes” Journal of Physical Chem. B (Submitted)Google Scholar
[9] Appenzeller, J., Martel, R., Avouris, P., Stahl, H., and Lengeler, B., “Optimized contact configuration for the study of transport phenomena in ropes of single-wall carbon nanotubes,” Appl. Phys. Lett., vol. 78, pp. 3313–3315, 2001.Google Scholar
[10] Martel, R., Derycke, V., Lavoie, C., Appenzeller, J., Chen, K., Tersoff, J., and Avouris, P., “Ambipolar electrical transport in semiconducting single-wall carbon nanotubes,” Phys. Rev. Lett., vol. 87, pp. 256805/1–256805/4, 2001.Google Scholar
[11] Appenzeller, J., Knoch, J., Derycke, V., Martel, R., Wind, S., and Avouris, P., “Field-modulated carrier transport in carbon nanotube transistors,” Phys. Rev. Lett., vol. 89, pp. 126801/1–126801/4, 2002 Google Scholar
[12] Heinze, S., Tersoff, J., Martel, R., Derycke, V., Appenzeller, J., and Avouris, P., “Carbon nanotubes as Schottky barrier transistors,” Phys. Rev. Lett., vol. 89, pp. 106801/1–106801/4, 2002 Google Scholar
[13] Derycke, V., Martel, R., Appenzeller, J., and Avouris, P., “Controlling doping and carrier injection in carbon nanotube transistors,” Appl. Phys. Lett., vol. 80, pp. 2773–2775, 2002 Google Scholar
[14] Wildoer, J. W., Venema, L. C., Rinzler, A. G., Smalley, R. E., and Dekker, C., “Electronic structure of atomically-resolved carbon nanotubes,” Nature, vol. 391, pp. 59–62, 2001 Google Scholar