Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-03T05:53:07.947Z Has data issue: false hasContentIssue false

Preparation of YBaCuO Superconducting Thin Films by Microwave Plasma Enhanced OMCVD

Published online by Cambridge University Press:  21 February 2011

Kenji Ebihara
Affiliation:
Kumamoto University, Dept. of Electrical Engineering and Computer Science, Kurokami 2–39–1, Kumamoto 860, Japan.
Tomoaki Ikegami
Affiliation:
Kumamoto University, Dept. of Electrical Engineering and Computer Science, Kurokami 2–39–1, Kumamoto 860, Japan.
Seiji Kanazawa
Affiliation:
Kumamoto University, Dept. of Electrical Engineering and Computer Science, Kurokami 2–39–1, Kumamoto 860, Japan.
Masanobu Shiga
Affiliation:
Dojindo Laboratories, Techno Research Park, Tabaru, Kamimashiki, Kumamoto 861–23, Japan.
Get access

Abstract

A plasma-enhanced organometallic chemical vapor deposition (PE-OMCVD) has been studied as an alternative plasma process to prepare high Tc superconducting thin films. Metal β–diketonates such as Y(fod)3, Ba(hfa)2 and Cu(hfa)2 were decomposed by Ar/O2 plasmas produced with an applicator type microwave discharge system. Optical emission spectroscopy was used to monitor radical species during vaporization and decomposition of the source materials. The YBaCuO films grown on substrates(MgO, SrTiO3 and c-Si) showed amorphous structure. After the post-annealing, the films exhibited an x-ray diffraction pattern with c-axis perpendicular to the substrate and showed an onset superconducting transition temperature of 87 K. The PE-OMCVD process provided high film deposition rate of 30–120 nm/min.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bai, G.R., Tao, W., Wang, R., Xie, L.M., Zhang, X.K. et al., Appl. Phys. Lett. 55, 194(1989).Google Scholar
2. Kobayashi, K., Ichikawa, S. and Okada, G., Jpn. J. Appl. Phys. 28, L22165(1989).Google Scholar
3. Dyer, P.E., Greenough, R.D., Issa, A., and Key, P.H., Appl. Phys. Lett. 53, 534(1988).Google Scholar
4. Ying, Q.Y., Shaw, D.T., and Kwok, H.S., Appl. Phys. Lett. 53, 1762(1988).Google Scholar
5. Fleddermann, C.B., J. Appl. Phys. 65, 2861(1989).Google Scholar
6. Klein, J.D. and Yen, A., Appl. Phys. Lett. 55, 2670(1989).Google Scholar
7. Ebihara, K., Kanazawa, S., Ikegami, T., and Shiga, M., in Proceedings of 9th International Symposium on Plasma Chemistry, edited by d'Agostino, , Vol.3, 1509(1989).Google Scholar