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Preparation and Optical Properties of Ge and C-Induced Ge Quantum Dots on Si

Published online by Cambridge University Press:  10 February 2011

K. Eberl ,
O. G. Schmidt ,
O. Kienzle  and
F. Ernst
K. Eberl
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 70569 Stuttgart, Germany, Electronic mail: [email protected]
O. G. Schmidt
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 70569 Stuttgart, Germany
O. Kienzle
Affiliation:
Max-Planck-Institut für Metallforschung, Seestr. 92, 70174 Stuttgart, Germany
F. Ernst
Affiliation:
Max-Planck-Institut für Metallforschung, Seestr. 92, 70174 Stuttgart, Germany
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Abstract

Pure Ge epitaxially grown on Si (100) at high temperatures forms typically 100 nm lateral size islands on top of a 3–4 monolayer thick wetting layer. In stacked layers of Ge dots pronounced vertical alignment is observed if the thickness of the Si spacer layers is smaller than about 50 nm. Pregrowth of a small amount of C on Si substrate induces very small 10 nm size Ge quantum dots after deposition of about 2 to 3 monolayers Ge. Photoluminescence (PL) studies indicate a spatially indirect radiative recombination mechanism with the no-phonon line strongly dominating. Strong confinement shift in the 1–2 nm high and 1Onm lateral size dots results in low activation energies of 30 meV, which causes luminescence quenching above 50K.

For large stacked Ge islands with 13 nm thin Si spacer layers we observe a significantly enhanced Ge dot-related PL signal up to room temperature at 1.55μm wave length. This is attributed to a spatially indirect transition between heavy holes confined within the compressively strained Ge dots and two-fold degenerated Δ state electrons in the tensile strained Si between the Ge stacked dots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 187
Copyright
Copyright © Materials Research Society 1999

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References

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