Published online by Cambridge University Press: 15 February 2011
LiSbO3 thin films have been prepared by the sol-gel process with metal alkoxides using a spin-coating method. The (Oll)-oriented and randomly oriented LiSbO3 thin films are obtained by the precursor film crystallizing under an atmosphere of a flowing mixture of water vapor and oxygen, and an air atmosphere, respectively. The two different atmospheres also affect the crystallization temperature of the films. The electrical conductivity of the (Oll)-oriented LiSbO3 thin film is approximately one order of magnitude larger than that of the randomly oriented LiSbO3 thin film in the temperature range of 380 to 600°C.