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Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

Published online by Cambridge University Press:  21 March 2011

Masanori Okuyama ,
Toshiyuki Nakaiso  and
Minoru Noda
Masanori Okuyama
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
Toshiyuki Nakaiso
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
Minoru Noda
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
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Abstract

Sr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC3.5.1
Copyright
Copyright © Materials Research Society 2001

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