Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-12-01T01:54:53.929Z Has data issue: false hasContentIssue false

Preparation and Characterization of Metal Alkoxide Derived Epitaxial Lead Titanate Based Thin Films

Published online by Cambridge University Press:  15 February 2011

Keiichi Nashimoto
Affiliation:
Materials Research Laboratory, Fuji Xerox Co., Ltd., 1600 Takematsu, Minamiashigara, Kanagawa, 250–1, Japan
Shigetoshi Nakamura
Affiliation:
Materials Research Laboratory, Fuji Xerox Co., Ltd., 1600 Takematsu, Minamiashigara, Kanagawa, 250–1, Japan
Get access

Abstract

Epitaxial and highly oriented lead titanate based thin films were prepared by a sol-gel process using non-hydrolyzed methoxyethoxide precursors and RTA process. PbTiO3 crystallized with preferred (001) or (100) orientation on SrTiO3 (100) and MgO (100). Solid phase (001) oriented epitaxial growth of PZT on SrTio3 was observed at 425°C, directly from the amorphous phase. That of PZT on MgO was observed at temperatures above 550°C, after the formation of pyrochlore phase. The PZT on SrTiO3 had a single (001) orientation and rocking curve full width at half maximum less than 0.08°. PZT showed a weak preferred (111) orientation on sapphire (0001) substrates, while highly (111) oriented PLT thin films were obtained on them. The guided wave modes were excited by a prism coupling for PZT thin films crystallized on SrTiO3 and MgO. Electrical properties of epitaxial PZT and PLT thin films on Nb-SrTiO3 substrates were characterized.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Okamura, T., Adachi, M., Shiosaki, T. and Kawabata, A., Jpn. J. Appl. Phys. 30, 1034 (1991).Google Scholar
2. Ramesh, R., Inam, A., Chan, W.K., Tillerot, F., Wilkens, B., Chang, C.C., Sands, T., Tarascón, J.M. and Keramidas, V.G., Appl. Phys. Lett. 59, 3542 (1991).Google Scholar
3. Sakashita, Y., Ono, T. and Segawa, H., J. Appl. Phys. 69, 8352 (1991).Google Scholar
4. Nashimoto, K. and Cima, M.J., Mater. Lett. 10, 348 (1991).Google Scholar
5. Nashimoto, K., in Ferroelectric Thin Films III, edited by Myers, E.R., Tuttle, B.A., Desu, S.B., and Larsen, P.K. (Mater. Res. Soc. Symp. Proc. 310, Pittsburgh, PA, 1994) pp. 293298.Google Scholar
6. Nashimoto, K. and Nakamura, S., Jpn. J. Appl. Phys. 33, 5147 (1983).Google Scholar
7. Swartz, S.L., Melling, P.J., and Grant, C.S. in Optical Materials, edited by Poker, D.B. and Ortiz, C. (Mater. Res. Soc. Proc. 152, Pittsburgh, PA, 1989) pp. 227232.Google Scholar
8. Tuttle, B.A., Voigt, J.A., Goodnow, D.C., Lamppa, D.L., Headley, T.J., Eatough, M.O., Zender, G., Nasby, R.D. and Rodgers, S.M.: J. Am. Ceram. Soc. 76, 1537 (1993).Google Scholar
9. Barlingay, C.K. and Dey, S.K., Appl. Phys. Lett. 61, 1278 (1992).Google Scholar
10. Nashimoto, K., Fork, D.K. and Anderson, G.B., unpublished.Google Scholar
11. Adachi, H., Kawaguchi, T., Kitabatake, M., and Wasa, K., Jpn. J. Appl. Phys. 22, suppl. 22–2, 11 (1983).Google Scholar