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Preliminary Results on Large Area X-ray a-SiC:H Multilayer Detectors with Optically Addressed Readout

Published online by Cambridge University Press:  01 February 2011

Manuela Vieira
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal, +351218317290, +351218317114
Yuri Vygranenko
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Miguel Fernandes
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Paula Louro
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Pedro Sanguino
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Alessandro Fantoni
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Reinhard Schwarz
Affiliation:
[email protected], IST, Fisica, Lisbon, 1049-001, Portugal
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Abstract

This paper investigates a feasibility of using a large area image sensor with an optically addressed readout for medical X-ray diagnostic imaging. A device prototype comprises a multilayer glass/ZnO:Al/p (a-SiC:H)/i (a-Si:H)/ n (a-SiC:H)/ i(a-Si:H)/p (a-SiC:H)/ a SiNx/ITO structure coupled to a scintillator layer. Here, the p-i-n-i-p structure works in both sensing and switching modes depending on the biasing conditions. A numerical simulation is used to optimize the semiconductor layer thicknesses in order to achieve a photocurrent matching between back-to-back diodes in switching mode. The charge carrier transport within the p-i-n-i-p structure is also analyzed under different electric and optical biasing conditions. A physical model supports the results.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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