Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-02T20:40:15.648Z Has data issue: false hasContentIssue false
  • English
  • Français

Preliminary Results on Large Area X-ray a-SiC:H Multilayer Detectors with Optically Addressed Readout

Published online by Cambridge University Press:  01 February 2011

Manuela Vieira ,
Yuri Vygranenko ,
Miguel Fernandes ,
Paula Louro ,
Pedro Sanguino ,
Alessandro Fantoni  and
Reinhard Schwarz
Manuela Vieira
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal, +351218317290, +351218317114
Yuri Vygranenko
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Miguel Fernandes
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Paula Louro
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Pedro Sanguino
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Alessandro Fantoni
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Reinhard Schwarz
Affiliation:
[email protected], IST, Fisica, Lisbon, 1049-001, Portugal
Get access

Abstract

This paper investigates a feasibility of using a large area image sensor with an optically addressed readout for medical X-ray diagnostic imaging. A device prototype comprises a multilayer glass/ZnO:Al/p (a-SiC:H)/i (a-Si:H)/ n (a-SiC:H)/ i(a-Si:H)/p (a-SiC:H)/ a SiNx/ITO structure coupled to a scintillator layer. Here, the p-i-n-i-p structure works in both sensing and switching modes depending on the biasing conditions. A numerical simulation is used to optimize the semiconductor layer thicknesses in order to achieve a photocurrent matching between back-to-back diodes in switching mode. The charge carrier transport within the p-i-n-i-p structure is also analyzed under different electric and optical biasing conditions. A physical model supports the results.

Keywords

sensorplasma-enhanced CVD (PECVD) (deposition)simulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A19-02
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Street, R. A. (Ed.), in Technology and Applications of Amorphous Silicon (Springer, Berlin, 2000) pp.147–221.Google Scholar
21. Beutel, J., and Kundel, H. L., Handbook of Medical Imaging, SPIE Press, 2000.Google Scholar
3 Rong, Xiujiang J. et al. Med. Phys. 28 (11) 2328 (2001).Google Scholar
4 Moy, J.-P., Nuclear Instruments and Methods in Physics Research, A 442, (2000) 26.Google Scholar
5 Vieira, M., Fernandes, M., Louro, P., Schwarz, R., Schubert, M., J. Non-Cryst. Solids, 299-302 (2002) 1245 Google Scholar
6 Vygranenko, Y., Louro, P., Vieira, M., Chang, J., and Nathan, A., J. Non-Cryst. Solids, 352 (2006)1837.Google Scholar
7 Fernandes, M., Vieira, M. and Martins, R., Sensors and Actuators A-Physical, 115 (2004) 357.Google Scholar
8 http://www.cneu.psu.edu/amps/default.htm.Google Scholar