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Pre-Gate Oxidation Cleaning of Silicon Wafer by Electric Arc Plasma Jet Treatment

Published online by Cambridge University Press:  15 February 2011

G. Ya. Pavlov
G. Ya. Pavlov*
Affiliation:
Centre for Analysis of Substances, 9, Elektrodnaya St., 111524 Moscow, Russia
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Abstract

The effect of arc plasma jet treatment (APJT) of silicon surface used for pre-gate oxidation cleaning on the electrophysical parameters of MOS structures (Si/SiO2/Si*/Al) has been studied- We show that APJT etching cleaning considerably improves the constant current charge to breakdown of MOS structures in comparison with conventional wet chemical cleaning. We have analyzed the effect of plasma cleaning conditions on the quality of gate oxide and SiO2/Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 321
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Hattori, T. in Proceedings of the 2nd International Symposium on Ultra-clean Processing of Silicon Surface (UCPSS' 94), Brugge, 1994, pp. 13–18.Google Scholar
2. Maslovsky, V.M. and Pavlov, G. Ya. in Proceedings of the 2nd International Symposium on Ultra-clean Processing of Silicon Surface (UCPSS' 94), Brugge, 1994, pp. 83–86.Google Scholar
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