Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-28T06:55:13.366Z Has data issue: false hasContentIssue false

Power generation performance of π-structure thermoelectric device using NaCo2O4 and Mg2Si elements

Published online by Cambridge University Press:  23 January 2013

Tomoyuki Nakamura
Affiliation:
SWCC SHOWA CABLE SYSTEMS CO., LTD. 4-1-1 Minami-Hashimoto Chuo-Ku Sagamihara-shi, Kanagawa-ken, 252-0253 Japan
Kazuya Hatakeyama
Affiliation:
SWCC SHOWA CABLE SYSTEMS CO., LTD. 4-1-1 Minami-Hashimoto Chuo-Ku Sagamihara-shi, Kanagawa-ken, 252-0253 Japan
Masahiro Minowa
Affiliation:
SWCC SHOWA CABLE SYSTEMS CO., LTD. 4-1-1 Minami-Hashimoto Chuo-Ku Sagamihara-shi, Kanagawa-ken, 252-0253 Japan
Youhiko Mito
Affiliation:
Showa KDE Co. Ltd. KDG AKASAKA bidg. 4F, 3-17-1, Akasaka, Minato-ku, Tokyo, 107-0052 Japan
Koya Arai
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba, 287-8510 Japan
Tsutomu Iida
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba, 287-8510 Japan
Keishi Nishio
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba, 287-8510 Japan
Get access

Abstract

Thermoelectric power generation has been attracting attention as a technology for waste heat utilization in which thermal energy is directly converted into electric energy. It is well known that layered cobalt oxide compounds such as NaCo2O4 and Ca3Co4O9 have high thermoelectric properties in p-type oxide semiconductors. However, in most cases, the thermoelectric properties in n-type oxide materials are not as high. Therefore, n-type magnesium silicide (Mg2Si) has been studied as an alternative due to its non-toxicity, environmental friendliness, lightweight property, and comparative abundance compared with other TE systems. In this study, we fabricated π-structure thermoelectric power generation devices using p-type NaCo2O4 elements and n-type Mg2Si elements. The p- and n-type sintering bodies were fabricated by spark plasma sintering (SPS). To reduce the resistance at the interface between elements and electrodes, we processed the surface of the elements before fabricating the devices. The end face of a Mg2Si element was covered with Ni by SPS and that of a NaCo2O4 element was coated with Ag by silver paste and soldering.

The thermoelectric device consisted of 18 pairs of p-type and n-type legs connected with Ag electrodes. The cross-sectional and thickness dimensions of the p-type elements were 3.0 mm × 5.0 mm × 7.6 mm (t) and those of the n-type elements were 3.0 mm × 3.0 mm × 7.6 mm (t). The open circuit voltage was 1.9 V and the maximum output power was 1.4 W at a heat source temperature of 873 K and a cooling water temperature of 283 K in air.

Type
Articles
Copyright
Copyright © Materials Research Society 2012 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Sakamoto, T., Iida, T., Taguchi, Y., Kurosaki, S., Hayatsu, Y., Nishio, K., Kogo, Y. and Takanashi, Y., J. Electron. Mater, 41, 14291435 (2012)CrossRefGoogle Scholar
Nemoto, T., Iida, T., Sato, J., Sakamoto, T., Nakajima, T. and Takanashi, Y., J. Electron. Mater, 41, 13121316 (2012)CrossRefGoogle Scholar
Sakamoto, T., Iida, T., Fukushima, N., Honda, Y., Tada, M., Taguchi, Y., Mito, Y., Taguchi, H. and Takanashi, Y., Thin Solid Films. 519, 85288531 (2011)CrossRefGoogle Scholar
Arai, K., Akimoto, H., Kineri, T., Iida, T. and Nishio, K., Key Engineering Mater, 485, 169172 (2011)CrossRefGoogle Scholar
Arai, K., Matsubara, M., Sawada, Y., Sakamoto, T., Kineri, T., Kogo, Y., , T, Iida, and Nishio, K., J. Electron. Mater, 41, 17711777 (2012)CrossRefGoogle Scholar
Terasaki, I., Sasago, Y. and Uchinokura, K., Phys. Rev. B, 56, 12685 (1997)CrossRefGoogle Scholar
Funahashi, R., Matsubara, I., Ikuta, H., Takeuchi, T., Mizutani, U. and Sodeoka, S., Jpn. J. Appl. Phys, 39, L1127 (2000)CrossRefGoogle Scholar
Ito, M., Nagira, T., Furumoto, D., Katuyama, S. and Nagai, H., Scripta Materialia, 48, 403408 (2003)CrossRefGoogle Scholar