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POST‐METALLIZATION ANNEALING OF ULTRA‐THIN REMOTE PLASMA ENHANCED CVD OXIDES

Published online by Cambridge University Press:  10 February 2011

L‐Å Ragnarsson ,
P. Lundgren  and
D. Landheer
L‐Å Ragnarsson
Affiliation:
Department of Solid State Electronics, Chalmers University of Technology, S‐412 96 Göteborg Sweden, [email protected], [email protected]
P. Lundgren
Affiliation:
Department of Solid State Electronics, Chalmers University of Technology, S‐412 96 Göteborg Sweden, [email protected], [email protected]
D. Landheer
Affiliation:
Department of Solid State Electronics, Chalmers University of Technology, S‐412 96 Göteborg Sweden, [email protected], [email protected] Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada K1 A 0R6
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Abstract

A remote plasma enhanced chemical vapour deposition (RPECVD) process was used to deposit thin silicon dioxides on silicon substrates. The oxide properties were compared with thermal oxides with similar thicknesses (2.5–9 nm) using capacitance‐voltage (C‐V), current‐voltage (I‐V) and constant voltage stress measurements (I‐t). Post‐metallization annealing (PMA) showed different annealing dynamics as compared to the thermal oxides for anneal times below approximately 1000 s (at 260 °C) after which the dynamics were similar. The deposited oxides had a higher initial interface state density (Dit) than the thermal oxides, but after PMA they were found to be of the same quality as the thermal oxides. Positive charging of the deposited oxides during constant voltage stress was the same as for thermal oxides, showing that the stress endurance of the two are similar.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 35
Copyright
Copyright © Materials Research Society 1997

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