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Post Deposition Ultraviolet Treatment of Silicon Nitride Dielectric: Modeling and Experiment

Published online by Cambridge University Press:  01 February 2011

Vladimir Zubkov
Affiliation:
[email protected], Applied Materials Inc., Thin Films Group, 3050 Bower Ave., P.O.BOX 58309, Santa Clara, CA, 95054, United States
Mihaela Balseanu
Affiliation:
[email protected], Applied Materials Inc., Thin Films Group, 3050 Bowers Ave.,, Santa Clara, CA, 95054, United States
Li-Qun Xia
Affiliation:
[email protected], Applied Materials Inc., Thin Films Group, 3050 Bowers Ave.,, Santa Clara, CA, 95054, United States
Hichem M'Saad
Affiliation:
Hichem_M'[email protected], Applied Materials Inc., Thin Films Group, 3050 Bowers Ave.,, Santa Clara, CA, 95054, United States
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Abstract

Simulation and FTIR analysis of the UV treatment impact on bond strengths of PECVD deposited silicon nitride films

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1. Pidin, S., Mori, T., Inoue, K., Fukuta, S., Itoh, N., Mutoh, E., Ohkoshi, K., Nakamura, R., Kobayashi, K., Kawamura, K., Saiki, T., Fukuyama, S., Satoh, S., Kase, M., Hashimoto, K., p. 213216, IEDM '04 Technical Digest. (2004)Google Scholar
2. Ghani, T., Armstrong, M., Auth, C., Bost, M., Charvat, P., Glass, G., Hoffmann, T., Johnson, K., Kenyon, C., Klaus, J., McIntyre, B., Mistry, K., Murthy, A., Sandford, J., Silberstein, M., Sivakumar, S., Smith, P., Zawadzki, K., Thompson, S., Bohr, M., p. 11.6.1–11.6.3, IEDM '03 Technical Digest. (2003)Google Scholar
3. Thompson, S., Sun, G., Wu, K., Lim, J., Nishida, T., p. 221224, IEDM '04 Technical Digest. (2004)Google Scholar
4. Arghavani, R., Xia, L.Q., M'Saad, H., Balseanu, M., Karunasiri, G., Mascarenhas, A., Thompson, S., Electron Device Letters, 27, 2 (2006)Google Scholar
5. Balseanu, M., Xia, L.Q., Zubkov, V., Le, M., Lee, J., and M'Saad, H., ECS Transactions, vol. 1, no. 1, 2005, pp 115124 Google Scholar
6. Stratmann, R. E., Scuseria, G.E., and Frisch, M. J., J.Chem.Phys. 109, 8218 (1998). C. Adamo and G. E. Scuseria, J.Chem.Phys. 111, 2889 (1999)Google Scholar
8. Frish, A., Frisch, M.J., and Truck, G. W. Gaussian 03 User's Reference (Gaussian, Inc., Pittsburgh, 2003)Google Scholar
9. Frisch, M. J., Trucks, G. W., Schlegel, H.B., Scuseria, G. E. et al., Gaussian 03 (Gaussian, Inc., Pittsburgh, 2003)Google Scholar