Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-02T21:09:14.884Z Has data issue: false hasContentIssue false
  • English
  • Français

Post Deposition Ultraviolet Treatment of Silicon Nitride Dielectric: Modeling and Experiment

Published online by Cambridge University Press:  01 February 2011

Vladimir Zubkov ,
Mihaela Balseanu ,
Li-Qun Xia  and
Hichem M'Saad
Vladimir Zubkov
Affiliation:
[email protected], Applied Materials Inc., Thin Films Group, 3050 Bower Ave., P.O.BOX 58309, Santa Clara, CA, 95054, United States
Mihaela Balseanu
Affiliation:
[email protected], Applied Materials Inc., Thin Films Group, 3050 Bowers Ave.,, Santa Clara, CA, 95054, United States
Li-Qun Xia
Affiliation:
[email protected], Applied Materials Inc., Thin Films Group, 3050 Bowers Ave.,, Santa Clara, CA, 95054, United States
Hichem M'Saad
Affiliation:
Hichem_M'[email protected], Applied Materials Inc., Thin Films Group, 3050 Bowers Ave.,, Santa Clara, CA, 95054, United States
Get access

Abstract

Simulation and FTIR analysis of the UV treatment impact on bond strengths of PECVD deposited silicon nitride films

Keywords

dielectricsimulationinfrared (IR) spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A19-04
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Pidin, S., Mori, T., Inoue, K., Fukuta, S., Itoh, N., Mutoh, E., Ohkoshi, K., Nakamura, R., Kobayashi, K., Kawamura, K., Saiki, T., Fukuyama, S., Satoh, S., Kase, M., Hashimoto, K., p. 213–216, IEDM '04 Technical Digest. (2004)Google Scholar
2. Ghani, T., Armstrong, M., Auth, C., Bost, M., Charvat, P., Glass, G., Hoffmann, T., Johnson, K., Kenyon, C., Klaus, J., McIntyre, B., Mistry, K., Murthy, A., Sandford, J., Silberstein, M., Sivakumar, S., Smith, P., Zawadzki, K., Thompson, S., Bohr, M., p. 11.6.1–11.6.3, IEDM '03 Technical Digest. (2003)Google Scholar
3. Thompson, S., Sun, G., Wu, K., Lim, J., Nishida, T., p. 221–224, IEDM '04 Technical Digest. (2004)Google Scholar
4. Arghavani, R., Xia, L.Q., M'Saad, H., Balseanu, M., Karunasiri, G., Mascarenhas, A., Thompson, S., Electron Device Letters, 27, 2 (2006)Google Scholar
5. Balseanu, M., Xia, L.Q., Zubkov, V., Le, M., Lee, J., and M'Saad, H., ECS Transactions, vol. 1, no. 1, 2005, pp 115–124 Google Scholar
6. Stratmann, R. E., Scuseria, G.E., and Frisch, M. J., J.Chem.Phys. 109, 8218 (1998). C. Adamo and G. E. Scuseria, J.Chem.Phys. 111, 2889 (1999)Google Scholar
8. Frish, A., Frisch, M.J., and Truck, G. W. Gaussian 03 User's Reference (Gaussian, Inc., Pittsburgh, 2003)Google Scholar
9. Frisch, M. J., Trucks, G. W., Schlegel, H.B., Scuseria, G. E. et al., Gaussian 03 (Gaussian, Inc., Pittsburgh, 2003)Google Scholar