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A Possible Production Technique for Modulation Doped Sige Heterostructures

Published online by Cambridge University Press:  10 February 2011

C. Rosenblad ,
M. Kummer ,
E. Müller ,
T. Hackbarth  and
H. Von Känel
C. Rosenblad
Affiliation:
Laboratorium für Festkörperphysik, ETH-Zürich, CH-8093 Zürich, Switzerland
M. Kummer
Affiliation:
Laboratorium für Festkörperphysik, ETH-Zürich, CH-8093 Zürich, Switzerland
E. Müller
Affiliation:
Laboratorium für Mikro- und Nanostrukturen, PSI, CH-5232 Villigen, Switzerland
T. Hackbarth
Affiliation:
DaimlerChrysler AG, Research and Technology, D-89081 Ulm, Germany
H. Von Känel
Affiliation:
Laboratorium für Festkörperphysik, ETH-Zürich, CH-8093 Zürich, Switzerland
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Abstract

The SiGe graded buffer layer is one of the most promising virtual substrates for future Si based high speed devices. The production of the SiGe buffer layer is, however, hampered by the time consumed by the synthesis of the several μm thick epitaxial layer. Low energy plasma enhanced chemical vapour deposition (LEPECVD) is a growth technique developed for low temperature epitaxy at high rates. Here we study the possibility to combine LEP-ECVD for graded SiGe buffer layer growth with other techniques for the growth of the electrically active layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 585: Symposium L – Fundamental Mechanisms of Low-Energy-Beam Modified Surface , 1999 , 141
Copyright
Copyright © Materials Research Society 2000

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