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Polysilicon Films Formed On Alumina By Aluminium Induced Crystallization Of Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

Etienne Pihan ,
Abdelilah Slaoui  and
Claude Maurice
Abdelilah Slaoui
Affiliation:
[email protected], CNRS-ULP, InESS, 23 rue du loess, Strasbourg, N/A, 67037, France
Claude Maurice
Affiliation:
[email protected], Ecole des Mines, SMS Centre, 158, cours Fauriel, Saint Etienne, N/A, N/A42023, France
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Abstract

We investigated the structural quality of polysilicon films fabricated by the aluminium induced crystallization (AIC) of amorphous silicon on alumina substrates. We analyzed the overall crystallographic quality of the poly-Si films in terms of grain size distribution and grain orientation versus crystallization temperature. For these studies, we used extensively the orientation imaging micrograph (OIM) technique, a very powerful tool that allows elucidating the inner-grain structure, the grain boundaries, the grain orientation. From our analysis, we may conclude that the polysilicon films formed by AIC on alumina substrates have the following features: (i) for all investigated temperatures, most of the silicon grains have a deviation angle from (100) crystallographic orientation between 5 and 25°; (ii) increasing the annealing temperature tends to decrease the (100) preferred orientation; (iii) the angular boundary distribution revealed that the main defects are those that have been observed inside isolated dentrites, namely low angle boundaries (<2°) and coincident site lattice boundaries such as Σ3, Σ9 and Σ27.

Keywords

Sicrystallographic structureannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A21-01
Copyright
Copyright © Materials Research Society 2006

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