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Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction

Published online by Cambridge University Press:  03 September 2012

L. Zhao ,
H. Marchand ,
P. Fini ,
S. P. Denbaars ,
U. K. Mishra  and
J. S. Speck
L. Zhao
Affiliation:
Materials Department and Electrical and Computer EngineeringDepartment University of California, Santa Barbara, CA 93106
H. Marchand
Affiliation:
Materials Department and Electrical and Computer EngineeringDepartment University of California, Santa Barbara, CA 93106
P. Fini
Affiliation:
Materials Department and Electrical and Computer EngineeringDepartment University of California, Santa Barbara, CA 93106
S. P. Denbaars
Affiliation:
Materials Department and Electrical and Computer EngineeringDepartment University of California, Santa Barbara, CA 93106
U. K. Mishra
Affiliation:
Materials Department and Electrical and Computer EngineeringDepartment University of California, Santa Barbara, CA 93106
J. S. Speck
Affiliation:
Materials Department and Electrical and Computer EngineeringDepartment University of California, Santa Barbara, CA 93106
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Abstract

The polarity of laterally epitaxially overgrown (LEO) GaN on Si(111) with an AlN buffer layer grown by MOCVD has been studied by convergent beam electron diffraction (CBED). The LEO GaN was studied by cross-section and plan-view transmission electron microscopy (TEM). The threading dislocation density is less than 108cm−2 and no inversion domains were observed. CBED patterns were obtained at 200 kV for the <1100> zone. Simulation was done by many-beam solution with 33 zero-order beams. The comparison of experimental CBED patterns and simulated patterns indicates that the polarity of GaN on Si(111) is Ga face.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.3
Copyright
Copyright © Materials Research Society 1999

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