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Point Defect Supersaturation During Zinc Diffusion into InP

Published online by Cambridge University Press:  26 February 2011

D. Wittorf ,
W. Jäger ,
A. Rucki ,
K. Urban ,
H.-G. Hettwer ,
N. A. Stolwijk  and
H. Mehrer
D. Wittorf
Affiliation:
Forschungszentrum Jülich, Institut für Festkörperforschung, D-52425 Jülich, Germany
W. Jäger
Affiliation:
Forschungszentrum Jülich, Institut für Festkörperforschung, D-52425 Jülich, Germany
A. Rucki
Affiliation:
Forschungszentrum Jülich, Institut für Festkörperforschung, D-52425 Jülich, Germany
K. Urban
Affiliation:
Forschungszentrum Jülich, Institut für Festkörperforschung, D-52425 Jülich, Germany
H.-G. Hettwer
Affiliation:
Universität Miinster, Institut für Metallforschung, D-48149 Münster, Germany
N. A. Stolwijk
Affiliation:
Universität Miinster, Institut für Metallforschung, D-48149 Münster, Germany
H. Mehrer
Affiliation:
Universität Miinster, Institut für Metallforschung, D-48149 Münster, Germany
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Abstract

Formation of defects during Zn diffusion into undoped and Fe-doped InP single crystals at 700°C has been observed by transmission electron microscopy for various diffusion conditions. The observations are correlated with Zn concentration profiles obtained by electron microprobe measurements and secondary-ion mass spectrometry. The results allow the conclusion that indiffusing interstitial Zn can occupy In sublattice sites via a kick-out reaction. Under appropriate diffusion conditions supersaturations of In self-interstitial atoms result leading to defect formation. Observations in Fe-doped InP suggest that Zn also replaces Fe on In sublattice sites leading to redistribution and to precipitation of Fe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 183
Copyright
Copyright © Materials Research Society 1995

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