Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-02T21:20:24.513Z Has data issue: false hasContentIssue false
  • English
  • Français

Plugging of Al Films Into Submicron Diameter Via Holes by Excimer Laser Irradiation

Published online by Cambridge University Press:  28 February 2011

R. Mukai ,
N. Sasaki  and
M. Nakano
R. Mukai
Affiliation:
Fujitsu Limited, Advanced Technology Division 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
N. Sasaki
Affiliation:
Fujitsu Limited, Advanced Technology Division 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
M. Nakano
Affiliation:
Fujitsu Limited, Advanced Technology Division 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
Get access

Abstract

Via-hole filling technique by momentarily melting an aluminum film has been developed, whereby planarization of aluminum films for multilevel interconnects on integrated circuits can be achieved. The melting is performed with an optical pulse irradiation from an ArF excimer laser without the problem of junction spiking. This technique is applicable to filling submicron-diameter vias having a diameter of 0.6μm with 0.7μm depth(aspect ratio:∼1.2). Very high aspect ratio(2.0) via-hole filling is achieved by heating the sample. During the laser irradiation, the sample substrate was kept at 300°C.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 229
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Blewer, R.S. and Wells, V.A., in Proc.lst International IEEE VLSI Multilevel Interconnection Conference, (1984), p.153.Google Scholar
2. Mogami, T., Okabayashi, H., Nagasawa, E., and Morimoto, M., in Proc.2nd International IEEE VLSI Multilevel Interconnection Conference, (1985), p.17.Google Scholar
3. Homma, Y. and Tsunekawa, S., J.Electrochem.Soc. 132, 1466 (1985).CrossRefGoogle Scholar
4. Lardon, M.A., Bader, H.P. and Hoefler, K.J., in Proc.3rd International IEEE VLSI Multilevel Interconnection Conference, (1986), p.212.Google Scholar
5. Tuckerman, D.B. and Weisberg, A.H., IEEE Electron Device Lett. EDL–7, 1 (1986).CrossRefGoogle Scholar